Fabrication of a CMOS compatible pressure sensor for harsh environments

Pakula, L.; Yang, Huang‐Hao; Pham, H.T.M.; French, P.J.; Sarro, P.M.

doi:10.1088/0960-1317/14/11/007

Cited by 71 publications

(38 citation statements)

References 10 publications

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“…Using PECVD, SiC can be deposited at temperatures o 400°C, thus making it suitable as a coating layer for an IC intended for use in harsh chemical environments. This layer has been observed to be pinhole-free for thicknesses greater than~200 nm and can be used as the mechanical material for pressure sensors 16 . LPCVD SiC can also be used, but this material has a deposition temperature above 700°C and thus cannot be used as a coating layer for standard circuitry (unless an alternative metal layer is used).…”

Section: Thin-film Depositionmentioning

confidence: 99%

Precision in harsh environments

2016

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Microsystems are increasingly being applied in harsh and/or inaccessible environments, but many markets expect the same level of functionality for long periods of time. Harsh environments cover areas that can be subjected to high temperature, (bio)-chemical and mechanical disturbances, electromagnetic noise, radiation, or high vacuum. In the field of actuators, the devices must maintain stringent accuracy specifications for displacement, force, and response times, among others. These new requirements present additional challenges in the compensation for or elimination of cross-sensitivities. Many state-of-the-art precision devices lose their precision and reliability when exposed to harsh environments. It is also important that advanced sensor and actuator systems maintain maximum autonomy such that the devices can operate independently with low maintenance. The next-generation microsystems will be deployed in remote and/or inaccessible and harsh environments that present many challenges to sensor design, materials, device functionality, and packaging. All of these aspects of integrated sensors and actuator microsystems require a multidisciplinary approach to overcome these challenges. The main areas of importance are in the fields of materials science, micro/nano-fabrication technology, device design, circuitry and systems, (first-level) packaging, and measurement strategy. This study examines the challenges presented by harsh environments and investigates the required approaches. Examples of successful devices are also given.

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Section: Thin-film Depositionmentioning

confidence: 99%

Precision in harsh environments

2016

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“…The structure and design of some selected MEMS devices employing capacitive detection and electrostatic actuation, namely, pressure sensor [8], accelerometers [12] and RF switch [11] together with wafer-level thin-film packaging [9,10], are presented below. Figure 2 presents the schematic structure of a capacitive absolute pressure sensor and the resultant cross-section after device fabrication.…”

Section: Pecvd Sic Mems Applicationsmentioning

confidence: 99%

“…Figure 2 presents the schematic structure of a capacitive absolute pressure sensor and the resultant cross-section after device fabrication. In this device, explained in detail in [8], the capacitance changes accordingly with changes in pressure. The pressure sensor consists of an array of 100 circular sensing membranes, connected in parallel.…”

Section: Pecvd Sic Mems Applicationsmentioning

confidence: 99%

“…An overview of selected MEMS applications realised in this technology at the DIMES Technology Center (DTC) of TU Delft is provided. Presented MEMS examples include-an absolute pressure sensor [8], wafer-level thin-film packaging [9,10], RF switch [9,11] and accelerometers [12]. Key features of the proposed technology are its ability to withstand certain harsh environments, versatility in fabricating a wide range of MEMS, reliable and cost-effective batch manufacturability, CMOS compatibility, smaller footprint and chip thickness than bulk micromachined counterparts [13,14] as well as reduced process complexity.…”

Section: Introductionmentioning

confidence: 99%

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PECVD silicon carbide surface micromachining technology and selected MEMS applications

Rajaraman

Pakula

Yang

et al. 2010

Int J Adv Eng Sci Appl Math

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Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with integrated circuits. In this paper we present a generic surface micromachining technology developed using a stressoptimised PECVD SiC as the structural and encapsulation material for MEMS. An overview of selected MEMS applications realised, at DIMES Technology Center (DTC) of TU Delft, using the PECVD SiC surface micromachining technology is provided. Presented MEMS examples include-a pressure sensor, wafer-level thin-film packaging, RF switch and accelerometers. Potential applications for the presented technology include automotive, industrial and medical systems, where devices are often subjected to harsh environments.Keywords Silicon carbide (SiC) Á Microelectromechanical systems (MEMS) Á Micromachining Á Pressure sensor Á Accelerometer Á RF switch Á Wafer-level packaging (WLP) Á Thin film encapsulation (TFE)

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“…The authors explained the fabrication process of capacitive pressure sensor using silicon integrated circuit technology in [1]. Further improvement on sensor fabrication and performance are discussed in [2][3][4]. In [5], the pressure sensor is integrated into a specifically designed micro-system, which includes both data acquisition and data processing modules.…”

mentioning

confidence: 99%

A wireless low-range pressure sensor based on P(VDF-TrFE) piezoelectric resonance

Kan

2010

Sensors and Actuators A: Physical

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A low-range bio-compatible pressure sensor based on P(VDF-TrFE) piezoelectric resonance has been tested and integrated to a wireless platform. Many critical physiological applications and in-vivo diagnosis require highly sensitive pressure monitoring in the 0-100kPa range, with negligible long-term drift and robust integration platform. The PVDF film and its copolymers exhibit significant piezoelectric properties after poling. P(VDF-TrFE) is preferred for its flexible film structure, low modulus, high yield strength and resistance to corrosive chemicals. All piezoelectric materials are lossy and thus the leakage current will cause drift of instantaneous response, which limits the direct use of piezoelectric charges in sensing.In this paper, the pressure sensor which adopts the appropriate properties of P(VDFTrFE) for low pressure levels, works as an acoustic wave resonator to avoid long-term

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Fabrication of a CMOS compatible pressure sensor for harsh environments

Cited by 71 publications

References 10 publications

Precision in harsh environments

Precision in harsh environments

PECVD silicon carbide surface micromachining technology and selected MEMS applications

A wireless low-range pressure sensor based on P(VDF-TrFE) piezoelectric resonance

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