2010
DOI: 10.1016/j.mssp.2010.10.016
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Fabrication of a CoSb3-based thermoelectric module

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Cited by 59 publications
(21 citation statements)
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“…Electrical and thermal contacts are known to play an important key role in improving the device-manufacturing factor (MF). MF represents the cumulative influence of various parameters in the fabrication process on the quality of the devices, and it is defined as MF = R id /R in [8]. In the present research, MF at ΔT of 184 K reached 22.3% and 21.5% for D1 and D2, respectively, which could be attributed to the value of the Rc as previously mentioned.…”
Section: Resultssupporting
confidence: 71%
See 1 more Smart Citation
“…Electrical and thermal contacts are known to play an important key role in improving the device-manufacturing factor (MF). MF represents the cumulative influence of various parameters in the fabrication process on the quality of the devices, and it is defined as MF = R id /R in [8]. In the present research, MF at ΔT of 184 K reached 22.3% and 21.5% for D1 and D2, respectively, which could be attributed to the value of the Rc as previously mentioned.…”
Section: Resultssupporting
confidence: 71%
“…It is lower than that calculated S-T curves of both p-and n-type legs (V calculated = (S p -S n ) × ΔT × n, where n is the number of couples). This voltage loss could have originated from many factors including low thermal conductivity of alumina substrate and unfavorable junctions between the TE legs and the electrodes[8]. I-P curves illustrated in Figs.…”
mentioning
confidence: 99%
“…Krzysztof Tomasz adopted Ni, Mo and Cr 80 Si 20 as the barrier layer in the SKD-Cu junctions, but the mismatched coefficient of thermal expansion (CTE) led to a potential mechanical problem [15]. Zhao et al reported the SKD-metal junctions, in which the electrode was made of Mo-Cu or W-Cu alloy and was jointed to SKD using Ti as the diffusion barrier [16,17]. Zhao's study showed considerable interfacial diffusion at the Ti/CoSb 3 interface during durability investigations.…”
Section: Introductionmentioning
confidence: 99%
“…The power level can be achieved through integration of a large number of TE devices, the efficiency is determined by temperature differential and by a dimensionless figure of merit ZT. ZT is characterized by several material parameters such as the Seebeck coefficient (S), thermal conductivity, and electrical resistivity (Mao, Liu, & Ren, 2016;Zhao et al, 2010). The total power output equals to the total heat input multiplied by the efficiency.…”
Section: Introductionmentioning
confidence: 99%