Fabrication of a field plate structure for diamond Schottky barrier diodes

Ikeda, Kazuhiro; Umezawa, Hamao; Tatsumi, Natsuo; Kumaresan, R.; Shikata, Shinichi

doi:10.1016/j.diamond.2008.10.021

Cited by 41 publications

(25 citation statements)

References 13 publications

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“…This is the reason for using two-dimensional simulations, achieved with the software "SENTAURUS TCAD" 23 and the parameters deduced from the diode geometry and doping profile, leading, respectively, to 7.2 and 7.7 MV/cm at the center of the diode, and more than 20 MV/cm at the edge of the Schottky dot. But this last value is less reliable than values at the diode center because field enhancement at the diode edge depends on the precise geometry, conductivity, and dielectric permittivity of each material, 24,25 not accurately known. It must be noticed that the voltage drop induced by the serial resistance of the Schottky diode leads to an overestimation of the electric field equal or lower than 2.5%.…”

mentioning

confidence: 99%

Extreme dielectric strength in boron doped homoepitaxial diamond

Volpe

Muret

Pernot

et al. 2010

Applied Physics Letters

141

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International audienceThe fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finite elements software. These properties result from a net shallow acceptor concentration below 10(16) cm(-3) in the first micrometers of an epitaxial film with optimized crystalline quality and a special oxidizing treatment of its surface, allowing the true dielectric strength of bulk diamond to be revealed

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mentioning

confidence: 99%

Extreme dielectric strength in boron doped homoepitaxial diamond

Volpe

Muret

Pernot

et al. 2010

Applied Physics Letters

141

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“…Considering the specific case of diamond, many technological steps are not available, so the solution for the device protection is limited by the field plate [2][3][4][5]. The critical field of diamond is very strong which imposes severe constraints at the device termination.…”

Section: Context and Aim Of The Studymentioning

confidence: 99%

New termination architecture for 1700 V diamond Schottky diode

Arbess

Isoird

Hamady

2013

2013 15th European Conference on Power Electronics and Applications (EPE)

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New field plate architecture is applied to pseudo vertical diamond Schottky diode. Using several field plate architectures, a TCAD simulation is realized in order to reduce the electric field in the dielectric while maintaining high breakdown voltage. Firstly and after simple variations in the field plate architecture, the breakdown voltage was improved from 1632 V to 2141 V at 700 K. Concerning E max in the dielectric, we obtained a decreasing of maximum electric field from 57 to 18 MV/cm.

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“…Due to its high dielectric permittivity, Ikeda [5,9] used the aluminum oxide (Ɛ ≈ 9) as a dielectric under the field plate. His results show an increasing of breakdown voltage from 200 V without termination to 700 V with field plate.…”

Section: Introductionmentioning

confidence: 99%

“…Several junction terminations have been explored for the Schottky diode in wide-band-gap semiconductors. Some of the more common ones are the guard ring [3,4], the metal field plates extending over an insulating surface layer [5,6], resistive Schottky barrier field plate (RESP) [7], and junction-termination extension (JTE) [8].…”

Section: Introductionmentioning

confidence: 99%

High termination efficiency using polyimide trench for high voltage diamond Schottky diode

Arbess

Isoird

Zerarka

et al. 2015

Diamond and Related Materials

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Using finite element simulations with Sentaurus TCAD (Technology Computer-Aided Design) software, a progress from simple and classic termination for a Schottky diode to new topology termination has been studied in this paper. A polyimide trench under field plate termination has been used. The efficiency increases from 67% for a simple field plate with optimum parameters up to 97%. The maximum electric field in the termination dielectric has been evaluated also. A wide study of the termination geometry has been made in order to extract the optimum parameters in two directions. The first one is to obtain a high efficiency regarding the breakdown voltage, and the second one is to have the minimum electric field peak at the termination edge.

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Fabrication of a field plate structure for diamond Schottky barrier diodes

Cited by 41 publications

References 13 publications

Extreme dielectric strength in boron doped homoepitaxial diamond

Extreme dielectric strength in boron doped homoepitaxial diamond

New termination architecture for 1700 V diamond Schottky diode

High termination efficiency using polyimide trench for high voltage diamond Schottky diode

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