Fabrication of a hard mask for InP based photonic crystals: Increasing the plasma-etch selectivity of poly(methyl methacrylate) versus SiO2 and SiNx

Wüest, Robert; Strasser, Patric; Robin, F.; Erni, Daniel; Jäckel, H.

doi:10.1116/1.2062567

Cited by 28 publications

(12 citation statements)

References 14 publications

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“…Details on the fabrication can be found elsewhere. 12,13 As indicated in the two-dimensional ͑2D͒ band-structure simulation 14 in Fig. 1͑b͒, the structure exhibits a TE band gap for u = a / = 0.27-0.43.…”

mentioning

confidence: 88%

A “standing-wave meter” to measure dispersion and loss of photonic-crystal waveguides

Wüest

Erni

Strasser

et al. 2005

Applied Physics Letters

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We demonstrate a "standing-wave meter" for measuring dispersion and loss along the length of a planar InP-based photonic-crystal waveguide. Light from a tunable cw laser was coupled into a single line-defect waveguide that terminated inside the crystal structure to form a retroreflector. This structure created a standing wave which was imaged using a scanning near-field optical microscope. By measuring the intensity distribution of the standing wave for a range of optical frequencies, waveguide dispersion and loss were measured with high accuracy. Comparisons of the measurement results with three-dimensional numerical simulations reveal that material dispersion effects as small as 0.8% affect the band structure measurably.

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confidence: 88%

A “standing-wave meter” to measure dispersion and loss of photonic-crystal waveguides

Wüest

Erni

Strasser

et al. 2005

Applied Physics Letters

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“…The combination of EBL and etching of such small dimensions is critical and was thoroughly optimized. Dry etching was carried out at room temperature in an Ar/CHF 3 atmosphere 18 . This results in a 1:2 etch ratio between the SiO 2 and PMMA EBL resist, which means that at resist with a thickness of at least 200 nm required for the process.…”

Section: Process Descriptionmentioning

confidence: 99%

Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization

et al. 2020

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The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.

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“…The wafer was grown by metal-organic vapor phase epitaxy. The pattern was written by EBL into a poly(methyl methacrylate) resist [15] and transferred to a SiN x hardmask by dry etching [23]. The hardmask is used to etch the InP / InGaAsP / InP layer stack by inductively coupled plasma reactive ion etching with a Cl 2 /Ar/N 2 chemistry [20].…”

Section: Bend Fabrication and Characterizationmentioning

confidence: 99%

Optimization of a 60° waveguide bend in InP-based 2D planar photonic crystals

Strasser¹,

Stark²,

Robin³

et al. 2007

J. Opt. Soc. Am. B

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We present a novel design for a W1 (one missing row of holes) waveguide 60°bend implemented in a substratetype InP / InGaAsP / InP planar photonic crystal based on a triangular array of air holes. The bend has been designed to provide high transmission over a large bandwidth. The investigated design improvement relies only on displacing holes while avoiding changing individual holes diameter in the interest of better process control (homogenous hole depth). Two-dimensional (2D) finite-element simulations were used to increase the relative transmission bandwidth from 18% to 40% of the photonic bandgap for unoptimized and optimized 60°b ends, respectively. The 2D results were verified by means of rigorous three-dimensional (3D) finite-difference time-domain (FDTD) simulations. We show that excellent agreement between 2D and 3D simulations can be obtained, provided a small effective-index shift of −0.024 ͑−0.74% ͒ and an imaginary loss parameter ͑⑀Љ = 0.014͒ is introduced in the 2D simulations. To demonstrate the applicability of our improved design, the bend was fabricated and measured using the endfire technique. A bending loss of 3 dB is obtained for the optimized W1 waveguide bend compared to more than 8 dB in the unoptimized case.

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Fabrication of a hard mask for InP based photonic crystals: Increasing the plasma-etch selectivity of poly(methyl methacrylate) versus SiO2 and SiNx

Cited by 28 publications

References 14 publications

A “standing-wave meter” to measure dispersion and loss of photonic-crystal waveguides

A “standing-wave meter” to measure dispersion and loss of photonic-crystal waveguides

Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization

Optimization of a 60° waveguide bend in InP-based 2D planar photonic crystals

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