Fabrication of a high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayer
Jiahui Li,
Wenhao Meng,
Zhanren Wang
et al.
Abstract:We present a high-performance Ge/Si PIN photodetector that leverages the advanced Ge/Si hetero-bonding method. The sputtered microcrystalline Ge is utilized as the interlayer, in conjunction with Smart-Cut technology, to fabricate high-quality Si-based Ge films. The exfoliated Ge film exhibits a surface roughness of 0.196 nm and a full width at half maximum of XRD peak of merely 70 arcseconds, which is much lower than that of the epitaxial ones. The Ge/Si PIN photodetectors based on the exfoliated Ge films are… Show more
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