Fabrication of a p–n Heterojunction Using Topological Insulator Bi2Te3–Si and Its Annealing Response

Aberrant photoelectric effect in the topological insulator/n-GaN heterojunction (Bi2Te3/n-GaN) under unpolarized illumination

“…The Bi 2 Te 3 TI film, due to its narrow band gap ( B g ≈ 0.17 eV), 23 formed a low resistance ohmic contact with Al. 40 The ohmic contact was also ascertained for the Al/Bi 2 Te 3 junction, by I – V measurements, through the contact on the Bi 2 Te 3 TI film (refer to ESI Fig. S4a†).…”

Innovative Design of Bismuth-Telluride-Based Thermoelectric Transistors

“…According to the relevant literature [ 24 ], the built-in voltage at the emitter–base junction varies with temperature: where k B is the Boltzmann constant, p i 1 ( x 1 ) is the intrinsic carrier concentration affected by the temperature distribution T 1 ( x 1 ), while P a 1 and N d remain constant regardless of the applied temperature gradient. The variations in p i 1 ( x 1 ) and n i ( x 1 ) with the temperature distribution can be described by the following [ 25 , 26 ]: where is the effective mass of the emitter, m e is the electron mass, and E gp 1 is the bandgap of the emitter.…”

“…where k B is the Boltzmann constant, p i1 (x 1 ) is the intrinsic carrier concentration affected by the temperature distribution T 1 (x 1 ), while P a1 and N d remain constant regardless of the applied temperature gradient. The variations in p i1 (x 1 ) and n i (x 1 ) with the temperature distribution can be described by the following [25,26]:…”

Weyl-Semimetal TaIrTe4/Si Nanostructures for Self-Powered Schottky Photodetectors

“…There are several approaches to solving the high dark current problems of semimetal-based photodetectors, especially for constructing p–n or Schottky heterojunctions. − Generally, van der Waals (vdW) junctions can be built regardless of the lattice mismatch. In BP/MoS 2 , graphene/Si, graphene/Ga 2 O 3 , PtTe 2 /Si, − PtSe 2 /GaAs, Bi 2 Te 3 /Si, etc. − reported before, these heterojunctions greatly combine the advantages of two kinds of materials and achieve multifunctionality. Furthermore, a certain potential barrier enables generation, rapid separation, and transmission of a number of photocarriers, thus suppressing the dark current.…”

“…20−24 Generally, van der Waals (vdW) junctions can be built regardless of the lattice mismatch. In BP/MoS 2 , 25 graphene/ Si, 26 graphene/Ga 2 O 3 , 27 PtTe 2 /Si, 28−30 PtSe 2 /GaAs, 31 Bi 2 Te 3 / Si, 32 etc. 33−38 reported before, these heterojunctions greatly combine the advantages of two kinds of materials and achieve multifunctionality.…”