Fabrication of an efficient electrodeposited Cu₂ZnSnS₄-based solar cells with more than 6% conversion efficiency using a sprayed Ga-doped ZnO window layer

Abstract

Cost effective non-vacuum sprayed GZO layer was utilized in electrodeposited CZTS-based thin film solar cells for the first time. The thus-obtained solar device presented an appreciable conversion efficiency of 6.43%.

Impact of alloying duration of an electrodeposited Cu/Sn/Zn metallic stack on properties of Cu2ZnSnS4 absorbers for thin‐film solar cells

“…2-μm-thick layers. Obvious darkening of the upper part of the Mo layer with a thickness of several hundred nm is attributable to the formation of MoS 2 during sulfurization in the present condition (see below) [33,35]. Appreciable grain growth was observed on CZTS films derived from CTZ precursors preheated for relatively long durations: CZTS films prepared from CTZ precursors preheated for more than 80 min (i.e.…”

“…Vacuum deposition processes, including sputtering [2][3][4][5][6][7][8] and evaporation [9][10][11], always require complex equipment and are consequently costly to implement on a large scale. In contrast, non-vacuum solution-based processes, such as solution coating [12,13], nano particle ink coating [14][15][16][17], hydrazine solution coating [18][19][20][21][22][23][24], and electrodeposition [25][26][27][28][29][30][31][32][33][34][35], potentially provide low-cost scalable routes to prepare CZTS-and CZTSSe-based solar devices. Among these non-vacuum processes, electrodeposition is a promising process because of its technical advantages for fabrication of low cost solar cells.…”

Influencing Mechanism of the Selenization Temperature and Time on the Power Conversion Efficiency of Cu2ZnSn(S,Se)4-Based Solar Cells

“…[1][2][3][4] Various deposition methods for the fabrication of CZTSSe films have been reported, including co-evaporation, 5-7 sputtering, [8][9][10][11] electrochemical deposition, [12][13] and solution deposition, [14][15][16][17][18][19][20][21] etc. CZTSSe-based solar cells with the highest efficiency (12.7%) have been fabricated by a hydrazine-based solution approach, which is promising as well in the light of the production cost.…”

Optimization of Cu2ZnSnS4 Absorber Layers via Sulfurization of Electrodeposited Cu-Zn-Sn Precursors for Photovoltaic Applications

“…The most common annealing or sulfurization temperature range is between 500 and 600 °C for CZTS based devices, where large, uniform crystal grains are obtained [125,[141][142][143].…”

“…Temperature increase is reported to change the grain morphology and enhance the crystallinity of CZTS [141][142][143]. Emrani et al reported on the influence of sulfurization temperature for sputtered Sn/Zn/Cu precursors using structure analyses and solar cell efficiency [142].…”