Trans. Electr. Electron. Mater.
 2024
DOI: 10.1007/s42341-024-00575-8
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Fabrication of an In-rich IGZO TFT by Co-sputtering of In2O3 and IGZO and Characterization of its Compensated Positive Bias Stress Properties

Yedam Lee,
Hyunsoo Kim,
Hyerin Jo
et al.
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