Fabrication of and transport studies on PrBa2(Cu0.8T0.2)3O7

Yang, Xinyu; Tipparach, Udom; Chen, Tar-Pin; Wagner, J. L.; Helmowski, Brian; Wang, J.T.

doi:10.1016/s0921-4534(00)01170-9

Physica C: Superconductivity

2000

DOI: 10.1016/s0921-4534(00)01170-9

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Fabrication of and transport studies on PrBa2(Cu0.8T0.2)3O7

Xinyu Yang

Udom Tipparach

Tar-Pin Chen

et al.

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Cited by 2 publications

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“…Tϳ300 K, xϭ0.2 Ϸ10 xϭ0.15 , but xϭ0.15 Ϸ xϭ0.1 Ϸ xϭ0.05 and xϭ0.05 / xϭ0 Ϸ100.We have also investigated other doping elements and found similar effects except that Al was the most effective among many others such as Ga, Ni, Zn, Co, and Fe [15][16][17]. We therefore selected Al with x ϭ0.2 in this work as a prototype for sputtering deposition of PrBa…”

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Epitaxial PrBa2(Cu0.8Al0.2)3O7 thin films grown by rf sputtering

Jin

Chen

Tipparach

et al. 2002

Applied Physics Letters

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Epitaxial thin films of PrBa 2 (Cu 0.8 Al 0.2) 3 O 7 have been vacuum deposited by rf sputtering on the LaAlO 3 substrates. Though electrically much more resistive, these Al-substituted films are all of orthorhombic structure and epitaxial quality on various oxide substrates, much like YBa 2 Cu 3 O 7 and PrBa 2 Cu 3 O 7 grown under similar conditions. The samples appeared to be shiny and dark as observed with the naked eye, but their electrical resistivity, (T), ranged from ϳ1 ⍀ cm at room temperature to about six orders of magnitude higher at Tϳ30 K. From the (T) functional for both the target and the films, which, by and large, follows Mott's T Ϫ1/4 law with their own relevant material constants, we believe that the mechanism of electrical conduction was mainly through variable range hopping. This suggests that the substitution of Al has caused extensive localization of charge carriers. The localization radius is ϳ0.2 nm while the hopping distance is ϳ3-9 nm.

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confidence: 91%

Epitaxial PrBa2(Cu0.8Al0.2)3O7 thin films grown by rf sputtering

Jin

Chen

Tipparach

et al. 2002

Applied Physics Letters

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Structures and properties of buffer layers with nanometer thickness for PBCMO/YBCO epitaxial multilayers

Tipparach

Chen

Sricheewin³

2018

Materials Today: Proceedings

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Fabrication of and transport studies on PrBa2(Cu0.8T0.2)3O7

Cited by 2 publications

References 8 publications

Epitaxial PrBa2(Cu0.8Al0.2)3O7 thin films grown by rf sputtering

Epitaxial PrBa2(Cu0.8Al0.2)3O7 thin films grown by rf sputtering

Structures and properties of buffer layers with nanometer thickness for PBCMO/YBCO epitaxial multilayers

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