Fabrication of As-doped p-type ZnO thin films using As2O3 as doping source material by E-beam evaporation

Kumar, Manoj; Choi, Sunghoon

doi:10.1016/j.apsusc.2008.07.054

Cited by 13 publications

(3 citation statements)

References 17 publications

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“…8 For the development of ZnO-based devices, it is essential to fabricate high quality n-and p-type ZnO semiconductors. [14][15][16][17] At present, various techniques have been used to produce p-type ZnO, for example, pulse laser deposition (PLD), 18 molecular-beam epitaxy (MBE), 19 chemical vapor deposition (CVD), 20 sol-gel 21 and hydrothermal methods. In contrast, it remains a challenge to incorporate acceptor defects into ZnO to ensure stable p-type conduction properties.…”

Section: Introductionmentioning

confidence: 99%

“…9,10 Several approaches using group-I and group-V elements as possible acceptor dopants have experimentally demonstrated the synthesis of p-type ZnO nanowires by ex situ or in situ doping processes, such as group-I elements (Li, Na and K) for Zn sites [11][12][13] or group-V elements (N, P, As and Sb) for oxygen sites. [14][15][16][17] At present, various techniques have been used to produce p-type ZnO, for example, pulse laser deposition (PLD), 18 molecular-beam epitaxy (MBE), 19 chemical vapor deposition (CVD), 20 sol-gel 21 and hydrothermal methods. 22,23 However, most of the above-mentioned methods can only prepare ZnO thin films or short nanowires, limiting the development of ZnO-based devices.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning

Zhang

et al. 2015

Nanoscale

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La-doped p-type ZnO nanofibers were successfully synthesized by electrospinning, followed by calcination. The microstructure and morphology of the La-doped ZnO nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The field effect curve of individual nanofibers confirms that the resulting La-doped ZnO fibers are p-type semiconductors. The doping mechanism is discussed. Furthermore, crossed p-n homojunction nanofibers were also prepared based on electrospun La-doped p-type ZnO and n-type pure ZnO fibers. The current-voltage curve shows the typical rectifying characteristic of a p-n homojunction device. The turn-on voltage appears at about 2.5 V under the forward bias and the reverse current is impassable.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning

Zhang

et al. 2015

Nanoscale

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“…Nitrogen creates a relatively deep acceptor level of 0.165 eV, 8,9 has a low solubility limit, and has the tendency to self-compensate via the formation of donor-type complexes, such as N 2 on O sites and Zn i -N O . [10][11][12] Other group V elements, including P, 6,[13][14][15][16] As, [17][18][19][20] and Sb [21][22][23] have also been reported to lead to p-type ZnO.…”

Section: Introductionmentioning

confidence: 99%

Donor behavior of Sb in ZnO

Liu

Izyumskaya

Avrutin

et al. 2012

Journal of Applied Physics

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Electrical behavior of Sb in ZnO:Sb layers doped in a wide concentration range was studied using temperature dependent Hall effect measurements. The layers were grown by plasma-enhanced molecular beam epitaxy, and the Sb concentration was changed by varying the Sb flux, resulting in electron concentrations in the range of 10 16 to nearly 10 20 cm À3 . Upon annealing, the electron concentration increased slightly and more notable was that the electron mobility significantly improved, reaching a room-temperature value of 110 cm 2 /V s and a low-temperature value of 145 cm 2 /V s, close to the maximum of $155 cm 2 /V s set by ionized impurity scattering. Hall data and structural data suggest that Sb predominantly occupies Zn sublattice positions and acts as a shallow donor in the whole concentration range studied. In the layers with high Sb content ($1 at. %), acceptor-type compensating defects (possibly Sb on oxygen sites and/or point-defect complexes involving Sb O ) are formed. The increase of electron concentration with increasing oxygen pressure and the increase in ZnO:Sb lattice parameter at high Sb concentrations suggest that acceptors involving Sb O rather than Sb Zn -2V Zn complexes are responsible for the compensation of the donors. V C 2012 American Institute of Physics. [http://dx.

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Electrical Transport Properties in Zinc Oxide

Claflin

2011

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

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Fabrication of As-doped p-type ZnO thin films using As2O3 as doping source material by E-beam evaporation

Cited by 13 publications

References 17 publications

Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning

Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p–n homojunctions by electrospinning

Donor behavior of Sb in ZnO

Electrical Transport Properties in Zinc Oxide

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