Fabrication of as-grown MgB2 films on ZnO (0001) substrates by molecular beam epitaxy

Harada, Y.; Takahashi, Tomoko; Kuroha, Masatake; Iriuda, H.; Nakanishi, Y.; Izumida, Fukunori; Endo, Hidenori; Yoshizawa, M.

doi:10.1016/j.physc.2006.06.038

Cited by 10 publications

(8 citation statements)

References 12 publications

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“…This tendency was also reported by Harada et al [9]. We cannot confirm that Then the effective pinning centers of all samples would be grain boundaries.…”

Section: Methodssupporting

confidence: 42%

Flux pinning properties of MgB2 thin films on Ti buffered substrate prepared by molecular beam epitaxy

Yonekura

Kugo

Fujiyoshi

et al. 2010

Physica C: Superconductivity and its Applications

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Transport properties of the MgB 2 thin films on Si, MgO and ZnO substrates with Ti buffer layer prepared by molecular beam epitaxy were investigated to clarify effects of the substrates and the Ti buffer layer on flux pinning. The critical current density J c of each sample shows different dependence on magnetic fields parallel to c-axis. However, the scaling analysis of the macroscopic pinning force for all the measured samples implies that the grain boundaries work as the dominant pinning centers for B//c. The pinning parameter for MgB 2 /Ti/Si estimated from the electric field E vs. the current density J characteristics shows the highest value among all the measured samples. This result is attributed to the high density of grain boundaries caused by the effect of both the Ti buffer and Si substrate in the growth process. Therefore, the selection of substrates and buffer layer strongly affects the flux pining properties of MgB 2 thin films and plays an important role in the determination of performance for superconducting devices and wires.

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“…This tendency was also reported by Harada et al [9]. We cannot confirm that Then the effective pinning centers of all samples would be grain boundaries.…”

Section: Methodssupporting

confidence: 42%

Flux pinning properties of MgB2 thin films on Ti buffered substrate prepared by molecular beam epitaxy

Yonekura

Kugo

Fujiyoshi

et al. 2010

Physica C: Superconductivity and its Applications

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“…Among these substrates, ZnO has been thought to be the best as its lattice constant, a = 3.351 Å, is very close to that of the MgB 2 , a = 3.083 Å, and both have the same hexagonal lattice symmetry. In fact, c-axis oriented MgB 2 film with T c = 35.0 K on the polar ZnO substrate has been successfully fabricated, 11 but, at the same time, a certain amount of unfavorable reaction products has also been found in the interface between the MgB 2 film and the ZnO substrate. 10 This experimental finding suggests the importance of the affinities between substrate and film in addition to minimizing lattice mismatch.…”

Section: Introductionmentioning

confidence: 99%

Energetics of Mg and B adsorption on polar zinc oxide surfaces from first principles

2008

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We have performed first-principles density-functional projector augmented-wave calculations to investigate the energetics of Mg and B adsorption on polar zinc oxide ͑ZnO͒ surfaces, thereby to understand the origin of the peculiar affinities between an epitaxial MgB 2 film and the ZnO substrate. We found that the ͑0001͒ Zn surface is relatively inert, while the ͑0001͒ O surface is very reactive in the adsorption of atomic species, where a triplaner BO 3 ͑a hump of MgO 3 ͒ binding unit is formed as a consequence of the B ͑Mg͒ atom adsorption on the surface. These binding units would be formed at an early stage in the epitaxial growth of MgB 2 film on the ZnO substrate, and subsequently lead to the formation of the reaction products that were recently found in the interface between the MgB 2 film and the ZnO substrate.

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“…We initially employed ZnO (0001) as the substrate as its substrate closely matched that of MgB 2 . The in-plane lattice spacing of the hexagonal ZnO lattice (a = 0.3522 nm) is close to that of the MgB 2 lattice (∆d = 5.4%; ∆d of Al 2 O 3 , for example, is 35.2 %) [13]. However, we could not do an in-plane alignment for these films, although their T c is relatively high at 35 K. The cross-sectional transmission electron microscope (TEM) image showed a large amount of reaction products near the MgB 2 /ZnO interface.…”

Section: Introductionmentioning

confidence: 56%

MgB2 SQUID for Magnetocardiography

Harada¹,

Kobayashi²,

Yoshizawa³

2012

Superconductors - Properties, Technology, and Applications

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Fabrication of as-grown MgB2 films on ZnO (0001) substrates by molecular beam epitaxy

Cited by 10 publications

References 12 publications

Flux pinning properties of MgB2 thin films on Ti buffered substrate prepared by molecular beam epitaxy

Flux pinning properties of MgB2 thin films on Ti buffered substrate prepared by molecular beam epitaxy

Energetics of Mg and B adsorption on polar zinc oxide surfaces from first principles

MgB2 SQUID for Magnetocardiography

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