1994
DOI: 10.1126/science.265.5171.502
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Fabrication of Atomic-Scale Structures on Si(001) Surfaces

Abstract: The scanning tunneling microscope has been used to define regular crystalline structures at room temperature by removing atoms from the silicon (001) surface. A single atomic layer can be removed to define features one atom deep and create trenches with ordered floors. Segments of individual dimer rows can be removed to create structures with atomically straight edges and with lateral features as small as one dimer wide. Conditions under which such removal is possible are defined, and a mechanism is proposed.

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Cited by 77 publications
(40 citation statements)
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“…The development of new techniques for the atomic manipulation [11,12] allows the growth of atomic monolayers on inert substratum, semiconductors or noble gases. These new possibilities rise the interest to analyze physical properties of low dimensional systems under different conditions.…”
Section: Introductionmentioning
confidence: 99%
“…The development of new techniques for the atomic manipulation [11,12] allows the growth of atomic monolayers on inert substratum, semiconductors or noble gases. These new possibilities rise the interest to analyze physical properties of low dimensional systems under different conditions.…”
Section: Introductionmentioning
confidence: 99%
“…Also, the use of a scanning tunnel microscope (STM) tip to fabricate structures atom by atom, viz., Xe on Ni substrates [46], or nanometer size gold particles on metals [47], or, putting individual atoms of Si substrate [48] has stimulated a lot of work in this field [49,50]. Our results can motivate future experiments in this direction.…”
Section: Introductionmentioning
confidence: 89%
“…Lyding et al converted the hydrogenterminated Si(100)-2 × 1 surface into clean silicon by locally desorbing hydrogen [8]. Lagally and co-workers [9] and Pang's group [10] have created structures on Si(100)-2 × 1 and Si(111)-7 × 7 surfaces with atomically straight edges and with lateral features as small as one dimer or one 7 × 7 unit cell wide. Recently, Pang's group patterned nanostructures by extracting the Si atoms from Si(111)-7 × 7 surfaces and redepositing them to form ridges at predetermined surface sites [11].…”
mentioning
confidence: 98%