Fabrication of CdZnSe/ZnSe quantum dots and quantum wires by electron beam lithography and wet chemical etching

Illing, M.

doi:10.1116/1.588267

Cited by 28 publications

(11 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With the advent of advance fabrication techniques [1][2][3][4][5][6][7][8][9], however, it has become possible to develop such systems in laboratory. Electron beam lithography and wet chemical etching [9,10]are examples of such techniques, used to synthesize CdZnSe/ZnSe or InGaAs/GaAs hetero structures based one and two dimensional quantum systems.…”

Section: Introductionmentioning

confidence: 99%

Static Pair Correlation Functions and Static Structure Factors of Unidirectional Quantum Systems

Dhingra¹

2019

IJSRPAS

View full text Add to dashboard Cite

Two of the structural functions, static pair correlation function of electrons around positively charged particles and static structure factor, have been theoretically calculated for a one dimensional quantum system with two mobile components occupying same charge density at equal temperatures. The structural functions have been investigated for their density and mass dependence. The reported values of static pair correlation function and structure factors are found to be dependent upon linear density and mass of positive components. Static pair correlation functions for a wide range of temperature, 100K≤T≤ 1500K, has also been generated theoretically. A variation, though diminutive, with temperature has been observed.

show abstract

Section: Introductionmentioning

confidence: 99%

Static Pair Correlation Functions and Static Structure Factors of Unidirectional Quantum Systems

Dhingra¹

2019

IJSRPAS

View full text Add to dashboard Cite

show abstract

“…Since the early 90th when nano-structuring of semiconductor layers became possible [1,2,3] several investigations concerning the structural properties of these nano-structures were carried out [4,5,7,6]. The shadow mask technology for II-VI semiconductor layers opened the possibility to fabricate wire structures immediately during the growth [8].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the relaxation behaviour of epitaxially grown wire structures by means of Monte‐Carlo‐Simulation

Schumacher

Faschinger²,

Bader³

et al. 2004

phys. stat. sol. (c)

View full text Add to dashboard Cite

We present results on the elastic relaxation behaviour of II-VI and III-V wire structures. The structures were obtained by wet etching of extended layers as well as shadow mask assisted Selected Area Epitaxy (SAE). The SAE wire structures are especially interesting since they are grown directly, do not require treatment after the growth process, and posess the ability to relax elastically during growth. Reciprocal space maps of strained semiconductor structures, obtained by High Resolution X-ray Diffraction (HRXRD) have so far been interpreted in the context of bulk elastic properties. In this contribution we introduce a relaxation procedure based on interatomic potentials. The wire structure is simulated with atomic resolution atop of the substrate material. A Monte-Carlo algorithm is applied to relax the structure while minimizing the strain energy. The reciprocal space maps calculated from the relaxed structure are in good agreement with the observed HRXRD maps. Hence we can interprete the strain state of the wire structures with atomic resolution.

show abstract

“…Several techniques have been suggested for the fabrication of II-VI quantum well wires QWWs, most of them based on dry [1][2][3] or chemical [1,4] etching. Dry etched QWWs are characterized by high uniformity of their size but low photoluminescence (PL) efficiency.…”

Section: Introductionmentioning

confidence: 99%

ZnCdSe/ZnSe quantum well wires fabricated by reactive ion etching and wet chemical treatment

Gurevich

Lavrova

Lomasov

et al. 1998

Semicond. Sci. Technol.

View full text Add to dashboard Cite

ZnCdSe/ZnSe quantum well wires (QWWs) of various lateral size down to 30 nm were fabricated using a combination of reactive ion etching (RIE) and subsequent new type of wet chemical treatment, followed by epitaxial overgrowth. The processing does not lead to any additional inhomogeneous broadening of the QWW photoluminescence (PL) lines, blue shifted due to lateral confinement, and the PL efficiency exhibits no dramatic reduction with decreasing wire width.

show abstract

Fabrication of CdZnSe/ZnSe quantum dots and quantum wires by electron beam lithography and wet chemical etching

Cited by 28 publications

References 11 publications

Static Pair Correlation Functions and Static Structure Factors of Unidirectional Quantum Systems

Static Pair Correlation Functions and Static Structure Factors of Unidirectional Quantum Systems

Investigation of the relaxation behaviour of epitaxially grown wire structures by means of Monte‐Carlo‐Simulation

ZnCdSe/ZnSe quantum well wires fabricated by reactive ion etching and wet chemical treatment

Contact Info

Product

Resources

About