“…TiO 2 deposits (from Ti(OiPr) 4 , CAS = 546-68-9), Nb 2 O 5 (from Nb(OEt) 4 dmae, SAFC research product), HfO 2 (from Hf(O-tBu) 4, CAS = 2172.02.3), ZrO 2 (from Zr(OtBu) 4 , CAS = 2081-12-1), and Ta 2 O 5 (from Ta(OEt) 5 , CAS = 150747-55-0) were deposited varying the number of active segments. For these precursors, at sufficient substrate temperature to overcome the activation energy of the precursor decomposition reaction, , the deposition takes place in the mass transfer limited regime, and the deposited thickness is directly proportional to the precursor flow, with a conversion efficiency factor of precursor into deposit close to 1. (Also possibly named “reactive sticking coefficient”, the conversion efficiency factor is defined as the ratio between the number of metal atoms incorporated in the deposited film (calculated from thin film thickness measurements) and the number of metal atoms impinging on the substrate (calculated from precursor flow simulation).…”