2015
DOI: 10.1016/j.tsf.2015.04.021
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Fabrication of complex oxide microstructures by combinatorial chemical beam vapour deposition through stencil masks

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Cited by 10 publications
(12 citation statements)
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“…In the present Research Article, we will focus on graded deposits of single and multielement oxides and show that the deposited thickness and the chemical composition are in good agreement with calculations, assuming that all precursor molecules reaching the substrate decompose. This imposes to work in a mass transfer limited deposition regime, which is usually obtained at intermediate surface temperature for single element deposition. , …”
Section: Resultsmentioning
confidence: 99%
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“…In the present Research Article, we will focus on graded deposits of single and multielement oxides and show that the deposited thickness and the chemical composition are in good agreement with calculations, assuming that all precursor molecules reaching the substrate decompose. This imposes to work in a mass transfer limited deposition regime, which is usually obtained at intermediate surface temperature for single element deposition. , …”
Section: Resultsmentioning
confidence: 99%
“…TiO 2 deposits (from Ti­(OiPr) 4 , CAS = 546-68-9), Nb 2 O 5 (from Nb­(OEt) 4 dmae, SAFC research product), HfO 2 (from Hf­(O-tBu) 4, CAS = 2172.02.3), ZrO 2 (from Zr­(OtBu) 4 , CAS = 2081-12-1), and Ta 2 O 5 (from Ta­(OEt) 5 , CAS = 150747-55-0) were deposited varying the number of active segments. For these precursors, at sufficient substrate temperature to overcome the activation energy of the precursor decomposition reaction, , the deposition takes place in the mass transfer limited regime, and the deposited thickness is directly proportional to the precursor flow, with a conversion efficiency factor of precursor into deposit close to 1. (Also possibly named “reactive sticking coefficient”, the conversion efficiency factor is defined as the ratio between the number of metal atoms incorporated in the deposited film (calculated from thin film thickness measurements) and the number of metal atoms impinging on the substrate (calculated from precursor flow simulation).…”
Section: Resultsmentioning
confidence: 99%
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“…44,45 A more sophisticated segmented source was described by Wagner for use in what is termed a chemical beam vapor deposition (CBVD) system. 35,[41][42][43]46 Their system (Sybilla 150 from ABCD Technology) was specifically designed for oxide material deposition. It is shown schematically in Figure 1.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Individual regions can be defined through the use of a mask. 41 One CVD approach employing a shutter is described below, and more extensive shuttering/masking approaches in PVD are described later.…”
Section: ■ Introductionmentioning
confidence: 99%