Fabrication of Crystalline HfO2 High-κ Dielectric Films Deposited on Crystalline γ-Al2O3 Films

Okada, Takayuki; Shahjahan, M.; Sawada, Kazuaki; Ishida, M.

doi:10.1143/jjap.44.2320

Cited by 6 publications

(5 citation statements)

References 13 publications

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“…This oxide is therefore a good candidate to be used directly as a gate oxide or as a thin buffer barrier when combined with amorphous or epitaxial oxides of higher dielectric constant. 6,7 Several groups have already reported on the epitaxial growth of cubic ␥-Al 2 O 3 films on Si͑111͒ and with more difficulties on Si͑001͒ except when chemical vapor deposition is used. [8][9][10][11][12][13][14] In a recent work, we have presented a study of the growth mechanism of ␥-Al 2 O 3 on ͑001͒-oriented Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Growth of crystalline γ-Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation

Merckling

Kazzi

Saint-Girons

et al. 2007

Journal of Applied Physics

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This work reports on the molecular beam epitaxy of high quality single crystal ␥-Al 2 O 3 thin films on Si͑001͒ and Si͑111͒ substrates. For both substrate orientations, film surfaces are found to be smooth and the oxide-Si interfaces are atomically abrupt without interfacial layers. Reflection high energy electron diffraction, x-ray diffraction, and transmission electronic microscopy characterizations were used to study the epitaxial relationship and the structural quality of the ␥-Al 2 O 3 layers depending on the Si substrate orientation. On Si͑111͒, the alumina layers present a high crystalline quality. Evidence is made for a "two-for-three" unit cell indirect epitaxial relationship between ␥-Al 2 O 3 and Si͑111͒. On Si͑001͒, after a transition from cubic to hexagonal surface symmetry, the growth planes of ␥-Al 2 O 3 change from ͑001͒ to ͑111͒ leading to a bidomain growth.

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Section: Introductionmentioning

confidence: 99%

Growth of crystalline γ-Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation

Merckling

Kazzi

Saint-Girons

et al. 2007

Journal of Applied Physics

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“…Many studies have been focused on the HfO 2 incorporated with aluminum in the form of HfAlO x alloy [12][13][14] or Al 2 O 3 /HfO 2 stack structure [15][16][17] as the gate dielectric to improve the thermal stability of HfO 2 thin films. However, the study on the effect of Al incorporation in these two different kinds of oxide structure has not been comparatively investigated in detail.…”

mentioning

confidence: 99%

Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO[sub 2] for Gate Dielectric Applications

Chiou

Chang

Wang

et al. 2007

J. Electrochem. Soc.

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The thermal stability in structural and electrical properties of HfO 2 , HfAlO x alloy, and Al 2 O 3 /HfO 2 stack thin films prepared by atomic layer deposition were comparatively investigated. Both HfAlO x and Al 2 O 3 /HfO 2 exhibit improved property against thermal degradation compared to the HfO 2 film. However, the incorporation of Al in alloy form provides characteristics superior to that in stack structure by retaining an amorphous structure up to 1000°C, which suppresses the leakage current and retards the growth of interfacial layer giving rise to lower increment of equivalent-oxide-thickness and interface trap density.

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“…Many studies have been focused on the HfO 2 incorpo- * This paper was presented at the 14th International Conference on Solid Films and Surfaces (ICSFS-14), Trinity College Dublin, Ireland, 29 June -4 July, 2008. † Corresponding author: lkschang@ess.nthu.edu.tw rated with aluminum in the form of HfAlO x alloy [12][13][14] or Al 2 O 3 /HfO 2 stack structure [15][16][17] as the gate dielectric to improve the thermal stability of HfO 2 thin films. However, the study on the effect of Al incorporation in these two different kinds of oxide structure has not been comparatively investigated in detail.…”

Section: Introductionmentioning

confidence: 99%

National Project on 45 to 32 nm Metal Oxide Semiconductor Field Effect Transistors for Next Century IC Fabrications

Hwang

Wang

Chang

et al. 2009

e-J. Surf. Sci. Nanotechnol.

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It is well known that the Taiwan Semiconductor industries play the very key roles for the worldwide IC foundry, and the advanced research of nanoelectronics is the lifeline for its long term developments. Professor Huey-liang Hwang effectively integrated the most outstanding research team and resource in Taiwan on the National Project on Nanometer CMOS Transistors for the 21 century, which is sponsored by the Ministry of Economic Affairs of ROC. A dozen of Professors from NTHU (National Tsing Hua University) with expertise at the novel materials and analysis and NCTU (National Chiao Tung University) with expertise at devices and reliability are devoted to the studies and are in collaboration with the world-wide-known company such as TSMC, and breakthrough of the key technologies of 45-32 nm technologies are achieved. The objective of this project is focused on the development of advanced metal gate/high-k MOSFET for 45 nm node generation and beyond, the efforts include the thermal stability of HfO2, HfAlOx alloy and Al2O3/HfO2 stack, prepared by ALD were compared, the incorporation of Al in alloy form gave superior characteristics by retaining an amorphous structure up to 1000 • C, which suppress the leakage current and retards growth of the interfacial layer giving the least increment of EOT and interface traps. Besides, by incorporating Al into TiO2 gave an EOT value of the Al2O3/TiAlOx/Al2O3 film down to 0.8 nm. Furthermore, high selectivity was obtained via etching the HfAlO and silicon wafer with pattern using the ICP Plasma. In this project, YbSi metal gate for n-MOSFET and IrSi metal gate p-MOSFET were successfully fabricated for the HfAlON MESFET. The results showed the good effective workfunction of 4.15 and 4.9 eV and no degradation of gate dielectric current and mobility in the YbxSi/HfAlON and IrxSi/HfAlON FUSI-gates by reducing the metal diffusion at lower temperatures.

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Fabrication of Crystalline HfO₂ High-κ Dielectric Films Deposited on Crystalline γ-Al₂O₃ Films

Cited by 6 publications

References 13 publications

Growth of crystalline γ-Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation

Growth of crystalline γ-Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation

Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO[sub 2] for Gate Dielectric Applications

National Project on 45 to 32 nm Metal Oxide Semiconductor Field Effect Transistors for Next Century IC Fabrications

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