Fabrication of Cu2ZnSnS4 (CZTS) by co-electrodeposition of Cu-Zn-Sn alloys, and effect of chemical composition of CZTS on their photoelectrochemical water splitting

Tanaka, Mitsuru; Hirose, Yuya; Harada, Yoshio; Takahashi, Masanari; Sakata, Yoshihisa; Higashimoto, Shinya

doi:10.1016/j.rechem.2023.100900

Cited by 7 publications

(2 citation statements)

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“…Visible-light and/or near-infrared sensitive p-type semiconductors that have been extensively investigated are Cu 2 O, 7 CuO, 8 CuInS 2 (CIS), 9–13 Cu 2 SnS 3 (CTS) 14–16 and Cu 2 ZnSnS 4 (CZTS). 17–22…”

Section: Introductionmentioning

confidence: 99%

Boosting charge transport in the BiVO₄ photoanode interface modified with an aluminum hydroxide layer for solar water oxidation

Matsumoto,

Fukushima,

Heguri

et al. 2024

Sustainable Energy Fuels

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Section: Introductionmentioning

confidence: 99%

Boosting charge transport in the BiVO₄ photoanode interface modified with an aluminum hydroxide layer for solar water oxidation

Matsumoto,

Fukushima,

Heguri

et al. 2024

Sustainable Energy Fuels

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“…However, they use the rare metals Ga and In, and contain the toxic element Se, thereby presenting concerns regarding their environmental impacts. An environmentally friendly, earth-abundant, nontoxic, and inexpensive alternative compound is essential for the long-term commercialization of solar cells, and Cu 2 ZnSnS 4 (CZTS) thin films have attracted attention as environmentally friendly, earth-abundant, and inexpensive alternatives considering these factors [ 1 , 2 , 3 , 4 , 5 ]. However, their disadvantage is poor crystal quality owing to their large number of elements.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Sulfide Annealing Conditions for Ag8SnS6 Thin Films

Munekata,

Uchimura,

Araki

et al. 2023

Materials

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Ag8SnS6 (ATS) has been reported to have a band gap of 1.33 eV and is expected to be a suitable material for the light-absorbing layers of compound thin-film solar cells. However, studies on solar cells that use ATS are currently lacking. The objective of this study is to obtain high-quality ATS thin films for the realization of compound thin-film solar cells using vacuum deposition and sulfide annealing. First, glass/SnS/Ag stacked precursors are prepared by vacuum deposition. Subsequently, they are converted to the ATS phase via sulfide annealing, and various process conditions, namely, annealing time, annealing temperature, and number of steps, are studied. By setting the heat treatment temperature at 550 °C and the heat treatment time at 60 min, a high-quality ATS thin film could be obtained. Multi-step heat treatment also produces thin films with nearly no segregation or voids.

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Characterization of thin films Al/p-Cu2ZnSnS4 (CZTS)/Mo Schottky diode: the effect of CZTS thin film thickness

Bousselmi,

Hannachi,

Khemiri

et al. 2023

J Mater Sci: Mater Electron

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Fabrication of Cu2ZnSnS4 (CZTS) by co-electrodeposition of Cu-Zn-Sn alloys, and effect of chemical composition of CZTS on their photoelectrochemical water splitting

Cited by 7 publications

References 50 publications

Boosting charge transport in the BiVO₄ photoanode interface modified with an aluminum hydroxide layer for solar water oxidation

Boosting charge transport in the BiVO₄ photoanode interface modified with an aluminum hydroxide layer for solar water oxidation

Optimization of Sulfide Annealing Conditions for Ag8SnS6 Thin Films

Characterization of thin films Al/p-Cu2ZnSnS4 (CZTS)/Mo Schottky diode: the effect of CZTS thin film thickness

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Fabrication of Cu2ZnSnS4 (CZTS) by co-electrodeposition of Cu-Zn-Sn alloys, and effect of chemical composition of CZTS on their photoelectrochemical water splitting

Cited by 7 publications

References 50 publications

Boosting charge transport in the BiVO4 photoanode interface modified with an aluminum hydroxide layer for solar water oxidation

Boosting charge transport in the BiVO4 photoanode interface modified with an aluminum hydroxide layer for solar water oxidation

Optimization of Sulfide Annealing Conditions for Ag8SnS6 Thin Films

Characterization of thin films Al/p-Cu2ZnSnS4 (CZTS)/Mo Schottky diode: the effect of CZTS thin film thickness

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Boosting charge transport in the BiVO₄ photoanode interface modified with an aluminum hydroxide layer for solar water oxidation

Boosting charge transport in the BiVO₄ photoanode interface modified with an aluminum hydroxide layer for solar water oxidation