Fabrication of Cu2ZnSnS4 Thin Films from Ball-Milled Nanoparticle inks under Various Annealing Temperatures

Zhang, Xianfeng; Fu, Engang; Zheng, Maoxi; Wang, Y.

doi:10.3390/nano9111615

Cited by 6 publications

(3 citation statements)

References 29 publications

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“…Presently photovoltaic modules based on wafer-based crystalline silicon solar cells account for > 90% of the global photovoltaic market [1][2][3][4][5]. Laudable enhancement in power conversion efficiency (η) has been experienced for this technology over the last few years leading to the thin film, tandem, and various lab-based architectures [6][7][8][9][10][11][12][13]. On top of that, the manufacturing process of crystalline-based solar modules requires expensive materials and production costs.…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation of Photo Generated Carrier Recombination Dynamics on the Device Characteristics for the Perovskite/Carbon Nitride Absorber Layer Solar Cell

Saeed¹,

Khan²,

Tauqeer³

et al. 2022

Preprint

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Herein we foremost detailed the numerical modeling of the double absorber layer- methyl ammonium lead iodide– carbon nitride layer solar cell and subsequently provided in-depth insight on the active layer associated with dominant radiative and non-radiative recombination losses limiting the efficiency ( ) of the solar cell. Under recombination kinetics phenomena, we explored the influence of Radiative recombination, Auger recombination, Shockley Read Hall recombination, the energy distribution of defects; Band Tail recombination (Hoping Model), Gaussian distribution, metastable defect states including single donor (0/+), single acceptor (-/0), Double Donor (0/+/2+), double acceptor (2/-/0-), and the interface layer defects on the output characteristics of the solar cell. Setting defect (or trap) density to with uniform energy distribution of defects for all the layers, we achieved the of 24. 16 %. A considerable enhancement in power conversion efficiency was perceived as we reduced the trap density to for the absorber layers. Further, it was observed that for the absorber layer with double donor defect states, the active layer should be carefully synthesized to reduce crystal order defects to keep the total defect density as low as to achieve efficient device characteristics

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Section: Introductionmentioning

confidence: 99%

Numerical Investigation of Photo Generated Carrier Recombination Dynamics on the Device Characteristics for the Perovskite/Carbon Nitride Absorber Layer Solar Cell

Saeed¹,

Khan²,

Tauqeer³

et al. 2022

Preprint

View full text Add to dashboard Cite

show abstract

“…At present, photovoltaic modules based on wafer-based crystalline silicon solar cells account for >90% of the global photovoltaic market [1][2][3][4][5]. Laudable enhancements in power conversion efficiency (η) have been experienced for this technology over the last few years, leading to thin film, tandem, and various lab-based architectures [6][7][8][9][10][11][12][13]. Additionally, the manufacturing process of crystalline-based solar modules requires expensive materials and high production costs.…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation of Photo-Generated Carrier Recombination Dynamics on the Device Characteristics for the Perovskite/Carbon Nitride Absorber-Layer Solar Cell

et al. 2022

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The nitrogenated holey two-dimensional carbon nitride (C2N) has been efficaciously utilized in the fabrication of transistors, sensors, and batteries in recent years, but lacks application in the photovoltaic industry. The C2N possesses favorable optoelectronic properties. To investigate its potential feasibility for solar cells (as either an absorber layer/interface layer), we foremost detailed the numerical modeling of the double-absorber-layer–methyl ammonium lead iodide (CH3NH3PbI3) –carbon nitride (C2N) layer solar cell and subsequently provided in-depth insight into the active-layer-associated recombination losses limiting the efficiency (η) of the solar cell. Under the recombination kinetics phenomena, we explored the influence of radiative recombination, Auger recombination, Shockley Read Hall recombination, the energy distribution of defects, Band Tail recombination (Hoping Model), Gaussian distribution, and metastable defect states, including single-donor (0/+), single-acceptor (−/0), double-donor (0/+/2+), double-acceptor (2/−/0−), and the interface-layer defects on the output characteristics of the solar cell. Setting the defect (or trap) density to 1015cm−3 with a uniform energy distribution of defects for all layers, we achieved an η of 24.16%. A considerable enhancement in power-conversion efficiency ( η~27%) was perceived as we reduced the trap density to 1014cm−3 for the absorber layers. Furthermore, it was observed that, for the absorber layer with double-donor defect states, the active layer should be carefully synthesized to reduce crystal-order defects to keep the total defect density as low as 1017cm−3 to achieve efficient device characteristics.

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“…However, the equipment of the MBE system requires a significantly elevated vacuum level and demands a high maintenance cost, which hinders large-scale applications in the photovoltaic industry. The non-vacuum method was widely used in fabricating CIGS [7,8] and Cu 2 ZnSnS 4 thin films (CZTS) [9,10] because only simple equipment and fabrication process were required, which led to a low product cost. The conversion efficiency of non-vacuum fabricated CIGS and CZTS solar cells has respectively reached 17.1% [11] has respectively reached 17.1% [11] and 12.6% [12].…”

Section: Introductionmentioning

confidence: 99%

Solar Cell Applications of Solution-Processed AgInGaSe2 Thin Films and Improved Properties by Sodium Doping

et al. 2020

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Binary nanoparticle inks comprising Ag 2 Se, In 2 Se 3 , and Ga 2 Se 3 were fabricated via a wet ball-milling method and were further used to fabricate AgInGaSe 2 (AIGS) precursors by sequentially spraying the inks onto a Mo-coated substrate. AIGS precursors were annealed under a Se atmosphere for 1 h at 570 • C. Na 2 Se thin layers of varying thicknesses (0, 5, 10, and 20 nm) were vacuum-evaporated onto the Mo layer prior to the AIGS precursors being fabricated to investigate the influence on AIGS solar cells. Sodium plays a critical role in improving the material properties and performance of AIGS thin-film solar cells. The grain size of the AIGS films was significantly improved by sodium doping. Secondary ion mass spectroscopy illustrated slight surficial sodium segregation and heavy sodium segregation at the AIGS/Mo interface. Double-graded band profiles were observed in the AIGS films. With the increase in Na 2 Se thickness, the basic photovoltaic characteristics of the AIGS solar cells were significantly improved. The highest solar cell conversion efficiency of 6.6% (open-circuit voltage: 775.6 mV, short-circuit current: 15.5 mA/cm 2 , fill factor: 54.9%, area: 0.2 cm 2 ) was obtained when the Na 2 Se thickness was 20 nm.Nanomaterials 2020, 10, 547 2 of 13 and 12.6% [12]. Herein, AIGS thin films were fabricated via a non-vacuum method to reduce the associated costs.Sodium has been widely adopted to improve device performance and the material properties of CIGS-related materials [13][14][15]. Numerous reports have demonstrated the positive influence of sodium on the chalcopyrite absorber layer properties and solar cell performance. There are research efforts that have assigned the improvement associated with sodium on the chalcopyrite-related film grain size [16], while other reports have focused on the mechanism of how sodium doping influences the electronic and material properties [17]. Sodium is observed to passivate defects in CIGS-related films, resulting in improved solar cell performance [18][19][20].In this work, a new non-vacuum method was adopted to fabricate low-cost AIGS absorber layers. Ag 2 Se, Ga 2 Se 3 , and In 2 Se 3 nanoparticle inks fabricated via a wet ball-milling method were used to further fabricate AIGS substrate precursors. The AIGS precursor structure is shown in Figure 1. Such structure types ensure double-graded bandgap structures in the AIGS precursors, which are important for improving solar cell performance [21]. To study the influence of Na on the properties of AIGS films and solar cell performance, Na 2 Se layers of various thicknesses were vacuum-evaporated onto Mo-coated soda-lime glass (SLG) substrates prior to the deposition of the nanoparticle layers. The Na 2 Se thicknesses were selected as 0, 5, 10, and 20 nm. Thereafter, the AIGS precursor was annealed in a continuously pumped two-zone furnace under a Se atmosphere to improve the grain size, crystallization, and electronic properties. Se flux was continuously supplied to prevent decomposition of the AIGS film because ...

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Fabrication of Cu2ZnSnS4 Thin Films from Ball-Milled Nanoparticle inks under Various Annealing Temperatures

Cited by 6 publications

References 29 publications

Numerical Investigation of Photo Generated Carrier Recombination Dynamics on the Device Characteristics for the Perovskite/Carbon Nitride Absorber Layer Solar Cell

Numerical Investigation of Photo Generated Carrier Recombination Dynamics on the Device Characteristics for the Perovskite/Carbon Nitride Absorber Layer Solar Cell

Numerical Investigation of Photo-Generated Carrier Recombination Dynamics on the Device Characteristics for the Perovskite/Carbon Nitride Absorber-Layer Solar Cell

Solar Cell Applications of Solution-Processed AgInGaSe2 Thin Films and Improved Properties by Sodium Doping

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