Fabrication of electrically pumped InAs/GaAs quantum dot lasers on Si substrates by Au‐mediated wafer bonding

Abstract

An electrically pumped 1.3 μm room‐temperature InAs/GaAs quantum dot laser on a Si substrate has been demonstrated with a threshold current density of 360 A/cm2. The double‐hetero laser structure was grown on a GaAs substrate by metal‐organic chemical vapor deposition and layer‐transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380‐nm‐thick Au‐Ge‐Ni alloy layer. We have demonstrated that insertion of a metal thin film in a wafer‐bonded GaAs/Si interface enhances interfacial electrical conductivity and suppresses optical leakage from the laser cavity into the substrate and therefore is suitable for III‐V‐on‐Si hybrid laser applications. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

A room temperature electrically pumped 1.3-µm InAs quantum dot laser monolithically grown on silicon substrates

“…The laser was measured from 20°C up to 42°C. The characteristic temperature was found to be 44K, however 1.3µm InAs/GaAs QD lasers on Si typically show poor T 0 in the range of 35-60K [6] and this can be increased by using p-type modulation doping of the quantum dots which has been shown to significantly increase the value of T 0 [10]…”

“…However there are two main issues preventing the realisation of an all silicon laser, the indirect bandgap of Si and two photon absorption. An alternative is to monolithically grow conventional III-V compounds on Si [6,7]. There are still many challenges to solve using this technique.…”

Micromanipulation of InP lasers with optoelectronic tweezers for integration on a photonic platform

“…Several approaches have been proposed to overcome the lack of an efficient, electrically pumped silicon laser that could be monolithically integrated in a silicon photonics platform. The most promising of these approaches are heteroepitaxial growth of germanium or III-V compounds on silicon [1], wafer bonding [2][3][4] and active alignment with pick and place tools [5].…”

Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications

“…However, the yield and reliability of these devices has yet to be demonstrated [9,10]. Direct growth of III-V materials onto Si substrates is considered the most manufacturable approach, but the high dislocation densities that arise from the GaAs-Si lattice mismatch and their different thermal expansion coefficients present challenges [11,12].…”