Fabrication of electro-optic Pb(Zr, Ti)O3 heterostructure waveguides on Nb-doped SrTiO3 by solid-phase epitaxy

Abstract

Pb(Zr, Ti)O 3 (PZT) heterostructure optical waveguides were grown on low resistivity Nb-doped SrTiO3(100) substrates by solid-phase epitaxy. The propagation loss was reduced to 1.7 dB/cm at the wavelength of 1.3 μm by introducing an epitaxial buffer layer between the PZT waveguide and the Nb-doped SrTiO3 substrate. An electro-optic beam deflector with an indium–tin–oxide prism electrode on the surface of the PZT waveguide showed efficient laser beam deflection as great as 3.3° (58 mrad) by applying 20 V between the prism electrode and the substrate. An index change higher than 0.001 at 5 V and an average apparent electro-optic coefficient larger than 46 pm/V were estimated from the deflection characteristic.

Preparation of transparent ferroelectric Pb0.92La0.08Ti0.96O3 thick films on ITO-coated glass substrates by a sol–gel route

“…Most research focused on the dielectric properties of PLT thin film with different La doping concentration and the thicknesses of the films were usually below 1 Am. In the field of optoelectronics, however, the ferroelectric films with thickness above 1 Am are required [9,10]. So far, there have been few reports on the dielectric and optical properties of the thick PLT films.…”

Optical and electro-optical properties of Pb(Zr,Ti)O3 and (Pb,La)(Zr,Ti)O3 films prepared by aerosol deposition method

“…By decreasing the applied electric field, the birefringence change linearly decreased, consistent with the expected bulk PZT in the ferroelectric phase. A quadratic EO coefficient R c of 2.5 Â 10 À18 m 2 /V 2 , and a linear EO coefficient r c of 44 pm/V, were obtained for the PLZT film and the poled PZT film, which is comparable to those obtained for films deposited using conventional methods, such as the sol-gel and sputtering methods [2,9,10].…”

“…Lanthanum-modified lead zirconate titanate [PLZT, (Pb,La)(Zr,Ti)O 3 ], is a transparent ferroelectric ceramic material, exhibiting a much larger EO effect than that of LiNbO 3 , which is commonly used in commercial waveguide devices. Epitaxial PLZT and lead zirconate titanate [PZT, Pb(Zr,Ti)O 3 ] waveguides on SrTiO 3 semiconductor substrates, with an acceptable level of propagation loss were fabricated for EO switches, by using a sol-gel process [2]. However, epitaxial growth using a sol-gel or vapor phase process requires a complicated preparation of stoichiometric ferroelectric thin films, resulting in higher costs.…”

Wet etching of sol-gel deposited lead lanthanum zirconate titanate for photonic crystal applications

“…One possibility is the epitaxial growth of PLZT on compatible substrates using techniques such as sputtering 3 and spin coating of sol-gel precursors followed by sintering. [7][8] Another technique may involve the reduction of PLZT feature size to minimize total propagation loss. By encapsulating the PLZT in a device which provides waveguiding and signal transduction, it may be possible to fabricate PLZT-based electrooptic tuners and switches with enhanced wavelength response.…”