Fabrication of electro optical nano modulator on silicon chip

Limon, Ofer; Businaro, Luca; Gerardino, A.; Bitton, L.; Frydman, A.; Zalevsky, Zeev

doi:10.1016/j.mee.2009.01.007

Cited by 11 publications

(13 citation statements)

References 6 publications

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“…A single-mode silicon waveguide is leading the wave into an SiO 2 wider region; a nano air hole has been produced inside the SiO 2 and two gold contacts are placed at each side of the capacitor to enable electrical field within the SiO 2 region; finally a charged nano gold particle is displaced within the air gap by the electric field generated in the capacitor [26]. A single-mode silicon waveguide is leading the wave into an SiO 2 wider region; a nano air hole has been produced inside the SiO 2 and two gold contacts are placed at each side of the capacitor to enable electrical field within the SiO 2 region; finally a charged nano gold particle is displaced within the air gap by the electric field generated in the capacitor [26].…”

Section: Electro-optical Modulatormentioning

confidence: 99%

Non-Conventional Modulation Schemes

Zalevsky¹,

Abdulhalim²

2010

Integrated Nanophotonic Devices

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Section: Electro-optical Modulatormentioning

confidence: 99%

Non-Conventional Modulation Schemes

Zalevsky¹,

Abdulhalim²

2010

Integrated Nanophotonic Devices

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“…This technique is suitable for mass production fabrication and thus may allow large scale realization of various nano photonic modulators as those mentioned by Ref. [4]. The main advantages of this technology are by having both high speed and precision deposition.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, manipulation of nanoparticles with dimension of starting at a few tens and up to a few hundred of nanometers can be used for photonic sensing and modulation applications [4]. Therefore, a mass production process allowing the deposition of the nanoparticles is a prerequisite requirement for those devices.…”

Section: Introductionmentioning

confidence: 99%

Tunable nano devices fabricated by controlled deposition of gold nanoparticles via focused ion beam

Shahmoon

Limon

Girshevitz

et al. 2010

Microelectronic Engineering

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a b s t r a c tIn this paper, we present the fabrication procedures as well as the preliminary experimental results of a novel method for significantly simplified deposition of charged nanoparticles at specific patterns based on focused ion beam (FIB) technology. The deposition method relies on the implantation of positive gallium ions on an insulated material which creates the basis for attracting the nanoparticles to the substrate. In order to substantiate the theory two patterns were generated on a silicon on insulator (SOI) chip with an upper layer of silicon of 200 nm. The two patterns are as follows: resolution target -consisting of six squares and 400 nm Â 400 nm circular sinusoidal tunnel. In addition, we demonstrate the utilization and applicability of the aforementioned method in a tunable radiation nano device as well as show its experimental characterization.

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“…A tunable y-coupler, which allows controlling the propagation of light inside a photonic structure, 1 all-optical nanomodulator, 2,3 sensor, 4,5 wavelength converter, 6 logic gate, flip flop, 7,8 and nanophotonic electro-optical modulator that, according to the position of the nanoparticle inside an air gap, controls whether the propagating signal will reach the output of the device or not. 9 In order to cascade those aforementioned devices, a unique mass production method for assembling nanoparticles into a specific area on the chip has been developed. 10 In this paper we present a new type of transistor where one can control the shape of the current-voltage (I-V) curve using a special arrangement of metallic nanoparticles.…”

Section: Introductionmentioning

confidence: 99%

Hybrid optically and electrically controllable field effect transistor based on manipulated nanoparticles

et al. 2011

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The hybrid optically and electrically controllable field effect transistor is a novel device whose current-voltage (I-V) curve can be controlled by optical or electrical modulation of metallic nanoparticles. The basic structure of this transistor is similar to that of a junction gate field effect transistor, where the conventional gate contact is replaced by an array of nanoparticles located on the upper side of the p-n junction and parallel to the channel direction, whereas the source and the drain contacts remain the same. The deposition of the nanoparticles is achieved by self-assembly using the focused-ion-beam technology. The displacement of the nanoparticles along the air gap is performed either optically or electrically. Optical control is based on a special type of optical tweezers realized by guiding and confining light into a nanosize void structure in which the nanoparticle is placed. Electrical control via an external electric field tunes the nanoparticles. Control of the I-V curve controls the logic function of the device. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).

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Fabrication of electro optical nano modulator on silicon chip

Cited by 11 publications

References 6 publications

Non-Conventional Modulation Schemes

Non-Conventional Modulation Schemes

Tunable nano devices fabricated by controlled deposition of gold nanoparticles via focused ion beam

Hybrid optically and electrically controllable field effect transistor based on manipulated nanoparticles

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