Fabrication of encapsulated silicon-vacuum field-emission transistors and diodes

Sune, C. T.

doi:10.1116/1.585957

Cited by 13 publications

(3 citation statements)

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“…Planar fabrication processes have been used to fabricate a variety of FEAs, including arrays with Mo [36][37][38][39]44,45,[61][62][63][64][65], Si [66][67][68], and GaAs [69] tips. Arrays having a tip density as large as 10 9 tips/cm 2 have been fabricated [62].…”

Section: Microwave Amplifiersmentioning

confidence: 99%

Cold Cathode Microwave Devices

Murphy

Kodis

2001

Vacuum Microelectronics

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Section: Microwave Amplifiersmentioning

confidence: 99%

Cold Cathode Microwave Devices

Murphy

Kodis

2001

Vacuum Microelectronics

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“…7,[18][19][20] This field emission process is enhanced by concentration of the electric field at sharp asperities 7,21,22 and reduction of the potential barrier with low work function cathode materials. [26][27][28] and ferroelectric tip emitter arrays with turn-on electric fields of 4-19 V/lm. The electron emission turn-on field, E ON , can be defined as the electric field necessary to generate a current density of 0.5 lA/cm 2 .…”

Section: Introductionmentioning

confidence: 99%

Field emission from nanometer-scale tips of crystalline PbZrxTi1−xO3

Fletcher

Mangalam

Martin

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors report field emission from nanometer-sharp tips of polarized PbZr x Ti 1Àx O 3 (PZT), silicon, and platinum. The PZT nanoemitters are fabricated in a batch fabrication process from single-crystal silicon tips that are coated with a 30 nm thick film of crystalline PZT. The nanoemitters start to emit electrons at fields as low as 2 V/lm and reach threshold emission, or turn-on, at fields as low as 3.9 V/lm. The turn-on field is 3.9 V/lm for PbZr 0.2 Ti 0.8 O 3 , 6.8 V/lm for PbZr 0.52 Ti 0.48 O 3 , and 10.75 V/lm for PbZr 0.8 Ti 0.2 O 3 . The silicon nanoemitters have an electron emission turn-on field of 7.2 V/lm, and the platinum nanoemitters have an electron emission turn-on field of 5.75 V/lm. Using a Fowler-Nordheim analysis, the calculated effective work function of the PbZr 0.2 Ti 0.8 O 3 film is 1.00 eV, and the field amplification factor is $

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“…Some research groups studied various vacuum sealing methods to operate vacuum devices under general conditions. These techniques are based on a microelectronic mechanical systems (MEMS) structure. − However, this fabrication process is complicated and requires many fabrication steps. Moreover, the sealing size level is still at the micrometer level or even a millimeter scale.…”

mentioning

confidence: 99%

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

Heo,

Shin,

Jun

et al. 2023

ACS Nano

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A nano vacuum tube which consists of a vacuum transistor and a nano vacuum chamber was demonstrated. For the device, a vacuum region is an electron transport channel, and a vacuum is a tunneling barrier. Tilted angle evaporation was studied for the formation of the nano level vacuum chamber structure. This vacuum tube was ultraminiaturized with several tens of 10–18 L scale volume and 10–6 Torr of pressure. The device structure made it possible to achieve a high integration density and to sustain the vacuum state in various real operations. In particular, the vacuum transistor performed stably in extreme external environments because the tunneling mechanism showed a wide range of working stability. The vacuum was sustained well by the sealing layer and provided a defect-free tunneling junction. In tests, the high vacuum level was maintained for more than 15 months with high reliability. The Al sealing layer and tube structure can effectively block exposed light such as visible light and UV, enabling the stable operation of the tunneling transistor. In addition, it is estimated that the structure blocks approximately 5 keV of X-ray. The device showed stable operating characteristics in a wide temperature range of 100–390 K. Therefore, the vacuum tube can be used in a wide range of applications involving integrated circuits while resolving the disadvantages of a large volume in old vacuum tubes. Additionally, it can be an important solution for next-generation devices in various fields such as aerospace, artificial intelligence, and THz applications.

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Fabrication of encapsulated silicon-vacuum field-emission transistors and diodes

Cited by 13 publications

References 0 publications

Cold Cathode Microwave Devices

Cold Cathode Microwave Devices

Field emission from nanometer-scale tips of crystalline PbZrxTi1−xO3

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

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