2004
DOI: 10.1016/j.vacuum.2004.01.065
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Fabrication of ferromagnetic Fe3Si thin films by pulsed laser deposition using an Fe3Si target

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Cited by 19 publications
(19 citation statements)
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“…The saturation magnetization value of Fe 5 Si 3 was uncertain since few reports have been published about it, while the saturation magnetization value of the Fe 3 Si thin lm was reported to be 590 emu cm À3 (82.0 emu g À1 ). 37 It was rational that saturation magnetizations of all the three samples were much lower than 82.0 emu g À1 because of the reduced particle sizes and a diamagnetic contribution from the silica support.…”
Section: Resultsmentioning
confidence: 95%
“…The saturation magnetization value of Fe 5 Si 3 was uncertain since few reports have been published about it, while the saturation magnetization value of the Fe 3 Si thin lm was reported to be 590 emu cm À3 (82.0 emu g À1 ). 37 It was rational that saturation magnetizations of all the three samples were much lower than 82.0 emu g À1 because of the reduced particle sizes and a diamagnetic contribution from the silica support.…”
Section: Resultsmentioning
confidence: 95%
“…The produced Fe 3 Si films also appear to be of a dominant B 2 structure for all existing basic structures (DO 3 , A 2 and B 2 ) of Fe 3 Si [5]. We also created the Fe 3 Si films at different substrate temperatures, which uncovered that 300 • C is the most suitable substrate temperature for an epitaxial deposition of Fe 3 Si films [4]. Employing a 300 • C substrate temperature, Fe 3 Si structures are enhanced while they remained at the same phase and kept their electromagnetic traits [4].…”
Section: Introductionmentioning
confidence: 90%
“…Iron silicide (FeSi) possesses various phases, ranging from the nonmagnetic metallic FeSi to the ferromagnetic iron silicide (Fe 3 Si), all with unique properties and potential applications of their own [2][3][4][5][6][7][8]. Fe 3 Si is an outstanding specimen among the phases of FeSi because Fe 3 Si owns the following striking features: an almost identical lattice constant to those of gallium arsenide (GaAs) [9], a slight lattice parameter misfit of −2.5% with FeSi 2 owning the β phase and 4.2% with Si [4,5,9,10], an impressive set of magnetic properties of a slight coercive field of 7.5 Oe and a comparatively high spin polarization of 45%, and an impressive thermal stability of over 800 K Curie temperature [5,9,11,12]. These features make Fe 3 Si attractive for the use in spin transistor application [2][3][4][5][6][7][8].…”
Section: Introductionmentioning
confidence: 99%
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“…The saturation magnetisations of the samples decreased from 61.9 to 20.1 emu g −1 with the proportion of Si in samples increasing. In addition, it has been reported that the saturation magnetisation of Fe was about 221.7 emu g −1 , which was much higher than that (82.0 emu g −1 ) of Fe 3 Si thin film . The saturation magnetisation (61.9 emu g −1 ) of sample 1Si‐4h‐900 was closer to that of Fe 3 Si thin film, which might result from the smaller sizes of Fe and Fe 3 Si nanoparticles and also a diamagnetic contribution from Al 2 O 3 .…”
Section: Resultsmentioning
confidence: 90%