Fabrication of Ferromagnetic Ge Quantum Dots Material

Abstract

GeMn magnetic quantum dots (QDs) material were grown with a GeH4/Ar mixed gas under a constant flowing at 400°C by means of plasma enhanced chemical vapor deposition (PECVD) process, then doped with Mn doped using magnetic sputtering technique and annealed at 600 C. The QDs with a Ge0.88Mn0.12 structure derived from the energy spectrum show a wide opening hysteresis loops with a large remnant magnetizations Mr are 0.1410-4 and 0.2510-4 emu/g for the as grown and the annealed samples. Moreover, the magnetic QDs show high quality voltage-current (I-V) and voltage-capacitance (C-V) properties. The magnetic GeMn QDs can be used to fabrication electromagnetic devices.