Fabrication of field emitter array using focused ion and electron beam induced reaction

Effect of Electron Beam‐Induced Deposition and Etching Under Bias

“…Many studies have been carried out using scanning electron microscopes (SEM) (Allen et al ., 1988;Bret et al ., 2005;Fischer et al ., 2006;Hoyle et al ., 1996;Kindt et al ., 2004;Kohlmann-von Platen et al ., 1993;Randolph et al ., 2005b;Utke et al ., 2000), transmission electron microscopy (TEM) (Kislov et al ., 1996;Matsui and Ichihashi, 1988;Mitsuishi et al ., 2003), and scanning transmission electron microscopy (STEM) (Silvis-Cividjian et al ., 2002van Dorp et al ., 2005) equipped with gas injection system for various gases and conditions, and has been found to be successful for the deposition of materials such as W (Choi et al ., 2006;Komuro, 1997, 1999;Hoyle et al ., 1993Hoyle et al ., , 1996Ichihashi and Matsui, 1988;Komuro and Hiroshima, 1997;Koops et al ., 1988), Au (Görtz et al ., 1995), Cu (Luisier et al ., 2004) and Pt (Takai et al ., 1998), and also for the etching with XeF 2 (Wang et al ., 2003;Rack et al ., 2003;Randolph et al ., 2005a) precursor gas. In summary, the technique has an enormous potential in many fields of application .…”

Influence of process variables on electron beam chemical vapor deposition of platinum

“…Platinum has been deposited using EBCVD previously by several groups, including Takai et al, 5 Hübner et al, 6 and Koops et al 7 Deposition was performed using C 5 H 5 Pt͑CH 3 ͒ 3 as a precursor. Typical platinum deposits contain 10%-20% Pt and over 70% carbon, along with small amounts of oxygen.…”

“…Volumetric deposition rates ranging from approximately 0.6 to 0.06 m 3 / min have also been reported. 5 Increasing voltage has been shown to decrease the deposition rate. Increasing the deposition time typically leads to a decrease in the deposition rates, but Hübner et al 6 did not report this effect over a short deposition time range.…”

Nanoscale electron-beam-stimulated processing

“…A variety of materials have been deposited using a focused electron beam including carbon, 1 chromium, 2 gold, 3-5 iron, 6-7 silicon, 8 silicon oxide, 9 palladium, 10 platinum, 11,12 and tungsten. [13][14][15][16][17][18][19][20][21] Fewer investigators have explored electron-beam etching, however, photoresist, 22,23 silicon, 24,25 silicon dioxide, 24 silicon nitride, 24 and tantalum/tantalum nitride 25 have been reported.…”