2006
DOI: 10.1109/ted.2006.877035
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Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology

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Cited by 39 publications
(27 citation statements)
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“…These results indicate that the neutral beam source is scalable, thus making it possible to obtain a large-diameter and uniform neutral beam, which is required for application to mass production. 28) In this paper, we discuss the application of sub-10-nm structure fabrication technology to several devices, [12][13][14][15][16][17][18][19][20][21] a low-k film deposition technique utilizing control of polymerization reactions at the atomic level, 22) and an oxidation reaction for metal oxide (HfO 2 ) deposition. 23)…”
Section: Neutral Beam Generation Sourcementioning
confidence: 99%
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“…These results indicate that the neutral beam source is scalable, thus making it possible to obtain a large-diameter and uniform neutral beam, which is required for application to mass production. 28) In this paper, we discuss the application of sub-10-nm structure fabrication technology to several devices, [12][13][14][15][16][17][18][19][20][21] a low-k film deposition technique utilizing control of polymerization reactions at the atomic level, 22) and an oxidation reaction for metal oxide (HfO 2 ) deposition. 23)…”
Section: Neutral Beam Generation Sourcementioning
confidence: 99%
“…The interface state density due to defect One promising approach to resolving these issues is the use of neutral beam process technology. [6][7][8][9][10][11][12][13][14][15][16][17][18] The neutral beam atomic layer process reduces the incidence of charged particles and UV photon radiation from the plasma onto the substrate so that the substrate is exposed only to the energycontrolled neutral beam. In other words, it is possible to precisely control the kinetic energy of the neutral beam by means of the ion acceleration energy obtained with the applied electric field before neutralization.…”
mentioning
confidence: 99%
“…Similarly, the oxidation of fin is also faster at corner and tip of fins. Furthermore, the dry etching on fins is more stringent due to the 3D structures ( Figure 14b) and a bias plasma pulsing scheme may be viable for minimizing Si loss [124,125]. …”
Section: Gate Etching Controlmentioning
confidence: 99%
“…We supposed that a nanopillar (NP) structure could be fabricated of the surface by using a precisely controlled method. Our fabrication technique using a bio-template and neutral-beam (NB) etching is capable of making high-precision, defect-free NP structures [18]- [20].…”
Section: Introductionmentioning
confidence: 99%