Fabrication of flat silicon surfaces using ion-exchange particles in ultrapure water

Ichii, Yoshio; Goto, Hidekazu

doi:10.1016/j.electacta.2006.08.048

Cited by 1 publication

(1 citation statement)

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“…It was almost the same level as the roughness (R a < 0:5 nm in a 2 Â 2 mm 2 ) of the etched surface of Si(001). 20) Therefore, we thought the surface flatness of the crystal obtained from aniline solvent was satisfactory. Furthermore, a 5 Â 5 mm 2 area of the rubrene crystal was observed [Fig.…”

Section: Evaluations Of Obtained Crystalsmentioning

confidence: 96%

Solution Growth of Rubrene Single Crystals Using Various Organic Solvents

Matsukawa

Takahashi

Tokiyama

et al. 2008

jjap

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To fabricate organic field-effect transistors (OFETs) with high carrier mobility, we attempted to grow 5,6,11,12tetraphenylnaphthacene (rubrene) single crystals from solution and to improve their quality. Investigations into solvents in which rubrene was highly soluble proved that its solubility depended on the presence or absence of aromatic rings and chloro groups rather than on the polarity of the solvents. Rubrene crystals were grown from aromatic solvents, specifically from toluene, p-xylene, and aniline solvents, as well as from 1,2-dichloroethane (DCE) solvent. As a result, rubrene single crystals larger than 1 mm were obtained. Powder X-ray diffraction (XRD) analysis showed that the crystals obtained from the p-xylene and toluene solvents were rubrene, and 1 H-nuclear magnetic resonance ( 1 H-NMR) measurement proved that the crystals had not incorporated the solvent at the detection level. In addition, atomic force microscopy (AFM) confirmed that the rubrene crystals grown from the p-xylene and aniline solvents had flat faces and that the crystal from the p-xylene solvent had monomolecular steps on parts of the surfaces. Rubrene single crystal OFETs with graphite electrodes and parylene as an insulator showed carrier mobilities of $0:75 cm 2 V À1 s À1 .

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Section: Evaluations Of Obtained Crystalsmentioning

confidence: 96%