Fabrication of free-standing AlN crystals by controlled microrod growth

Properties and potential applications of two-dimensional AlN

“…The most commonly used morphologies of crystalline AlN are 1D nanostructures and 3D bulk phases while 2D AlN single crystals as gate dielectric are in their infancy. The development of such material still suffers from nonideal 2D morphology, not sufficiently thin and laterally continuous dielectric [61,[141][142][143][144][145][146][147][148][149].…”

A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality

“…It can be seen that the pattern of the SiC substrate and the region with large FWHM observed in the FWHM mapping are in the same location. It is known that a 1% lattice mismatch generates a high density of dislocations of about 10 10 cm -2 at the interface between AlN and SiC, and that the dislocation density is significantly smaller when the hetero-grown layer forms a hollow structure [2,10]. This suggests that the flexible substrate can also be expected to reduce the crystal defect density by reducing the interfacial area.…”

“…(b)). The mesa structure on the SiC surface is fabricated by selective ion etching or the ununiform thermal decomposition of the SiC surface in the initial stage of AlN growth [2]. However, the critical issue of this method is that the lateral wing-like of AlN is deformed due to lattice mismatch and thermal stress, causing dislocation and grain boundary generation [3,4] (Fig.…”

ScAlN nanowires: A cathodoluminescence study

“…To gain additional insight into the structure and distribution of Sc in the nanowires, CL spectra were taken at 4.6 K from the asgrown wires, a reference sample of pure AlN nanowires produced by sublimation [20][21][22], and individual wires on a copper grid. The spectra appear invariant under variations of the gun voltage (Fig.…”