Solution-processed transparent conductive
oxides offer the advantages
of low-cost, high-throughput fabrication of electronic devices compared
to the specific requirements of vacuum deposition techniques. However,
adapting the current state of the art to ink deposition calls for
optimization of the precursor ink composition and the postdeposition
process. Solution processing of indium tin oxide films can be accomplished
at reduced temperatures (250–400 °C) by annealing soluble
precursor metal salts together with a fuel/oxidizer, causing an exothermic
reaction with elevated local temperatures. Following layer-by-layer
cycles of deposition and annealing, a postprocessing step is required
via heating (300 °C) under a 5% H2 reducing atmosphere.
To address the discrepancy between the versatility of ink deposition
and the limitations of controlled atmosphere postprocessing, here
we investigate the effects of postprocess dipping in aqueous sodium
borohydride at room temperature as an alternative, which allows for
a completely solution-based process from ink to film. In addition
to postprocessing, the solution composition was also optimized by
removing the fuel additive and by adjusting the In/Sn content. Indium
tin oxide (ITO) films were spin-coated and annealed in air at 250,
300, and 400 °C and characterized by UV/vis spectroscopy to obtain
optical transmittance, atomic force microscopy to obtain film thickness
and surface morphology, and a Hall effect system for electrical parameters.
Additional data from X-ray photoelectron spectroscopy (XPS) and X-ray
diffraction (XRD) indicate that crystallinity is affected by the reducing
environment. Results revealed an order-of-magnitude improvement of
the Haacke figure of merit (FOM) from 4.3 × 10–4 Ω–1, 382 Ω/□ sheet resistance
(R
s), and 84% transmittance (%T) for the traditional 9:1 In/Sn precursor ink with fuel
additive followed by 300 °C of 5% H2-furnace post-treatment
compared to that of the optimized fully solution-processed 8.5:1.5
In/Sn ink without fuel followed by an ambient air at 25 °C dipping
in aqueous sodium borohydride, leading to 3.0 × 10–3 Ω–1 FOM, 84.5 Ω/□ R
s, and 87%T including the glass substrate.