Fabrication of GaInAs quantum disks using self-organized InP islands as a mask in wet chemical etching

Abstract

Published by the AIP PublishingArticles you may be interested in The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy J. Appl. Phys. 80, 6855 (1996)

Designed formation of the stable adduct InP/CTAB/Clay

“…In the past decades, there are many studies on the preparation of InP quantum dots (QDs), such as colloid chemistry, molecular beam epitaxy (MBE), organometallic chemical vapor deposition (MOCVD) and physical vapor deposition [5][6][7][8]. Typically, the monodispersed InP nanoparticles can be prepared by the dehalosilylation reaction between InCl 3 and [(CH 3 ) 3 Si] 3 P in either trioctylphosphine oxide (TOPO) or a mixture of TOPO and trioctylphosphine (TOP) at 270 1C followed with the size-selective reprecipitation [4,[9][10][11] or by the direct decomposition of In[P(t-Bu) 2 ] 3 complex in 4-ethylpyridine at 167 1C [12].…”