Fabrication of GaN‐based striped structures along the &lt;11$ \bar 2 $0&gt; direction by the combination of RIE dry‐etching and KOH wet‐etching techniques to recover dry‐etching damage

Itoh, Morimichi; Kinoshita, Toru; Kawasaki, Koji; Takeuchi, Misaichi; Koike, Choshiro; Aoyagi, Yoshinobu

doi:10.1002/pssc.200565392

Cited by 8 publications

(6 citation statements)

References 16 publications

(16 reference statements)

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“…[11][12][13][14][15] Of these methods, cleaving has produced the smoothest facet surfaces with root-mean-square (RMS) roughness values on the order of 1 nm for GaN-based laser diodes (LDs) grown on SiC. 3 However, etched facets have a number of advantages, including applicability to laser epilayers grown on substrates such as sapphire that do not have common cleavage planes, and the potential for on-wafer laser testing.…”

Section: Introductionmentioning

confidence: 99%

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

Miller

Crawford

Allerman

et al. 2009

Journal of Elec Materi

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Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al x Ga 1Àx N-based deep-ultraviolet laser-diode heterostructures where x = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and radiofrequency (RF) power to achieve a facet angle of 5 deg from vertical. Subsequent etching in AZ400K developer was investigated to reduce the facet surface roughness and improve facet verticality. The resulting combined processes produced improved facet sidewalls with an average angle of 0.7 deg from vertical and less than 2-nm root-mean-square (RMS) roughness, yielding an estimated reflectivity greater than 95% of that of a perfectly smooth and vertical facet.

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Section: Introductionmentioning

confidence: 99%

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

Miller

Crawford

Allerman

et al. 2009

Journal of Elec Materi

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“…Furthermore, clean, smooth and straight structures are created, and the hall mobility, as well as electrical and optical performance, are superior to dry etching methods. Itoh and his group have combined both methods . Subsequent wet etching was able to remove the damage induced by dry etching in the first place.…”

Section: Introductionmentioning

confidence: 99%

Wet‐Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production

Tautz

Díaz

2018

ChemistrySelect

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Gallium nitride (GaN) is the key material for the fabrication of blue and white light emitting diodes (LEDs). Etching of this material is applied to improve the light extraction efficiency of the product. Wet‐chemical etching of GaN is commonly carried out by treatment with aqueous KOH solution at elevated temperature. Thereby, the anisotropic etching results in a highly rough surface. Hence, a remarkably higher out‐coupling possibility of generated photons is feasible. On the other hand, anisotropy generally prohibits the application of a predictable and standardized etching process. In this review, both material‐ and process‐dependent influences on the etching performance in aqueous KOH solution are classified. Herein, we critically present the factors that affect the etching rate of GaN. Moreover, the etching mechanism at the molecular level and the generation of anisotropy from the hexagonal crystal lattice are discussed. The existing gaps in the current understanding of this process maintain the field still open for further research aligned to a permanent interest of the electronic industry.

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“…3) Therefore, a plasma etching process is inevitable to effectively fabricate GaN-based devices. [4][5][6][7] This plasma etching process induces damage that affects the optical and electrical performances. Until now, several studies on plasma-induced damage (PID) of GaN-based materials have been carried out, however, to the best of our knowledge, almost all of the studies have been focused on and limited to the topmost surface regions.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well

Izumi¹,

Minami²,

Kamada³

et al. 2013

Jpn. J. Appl. Phys.

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Plasma-induced damage (PID) due to Cl2/SiCl4/Ar plasma etching of the GaN capping layer (CAP)/GaInN single quantum well (SQW)/GaN structure was investigated by conventional photoluminescence (PL), transmission electron microscopy (TEM), and time-resolved and temperature-dependent photoluminescence (TRPL). SQW PL intensity remained constant initially, although plasma etching of the CAP layer proceeded, but when the etching thickness reached a certain amount (∼60 nm above the SQW), PL intensity started to decrease sharply. On the other hand, TEM observations show that the physical damage (structural damage) was limited to the topmost surface region. These findings can be explained by the results of TRPL studies, which revealed that there exist two different causes of PID. One is an increase in the number of nonradiative recombination centers, which mainly affects the PL intensity. The other is an increase in the quantum level fluctuation owing mainly to physical damage.

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Fabrication of GaN‐based striped structures along the <11$ \bar 2 $0> direction by the combination of RIE dry‐etching and KOH wet‐etching techniques to recover dry‐etching damage

Cited by 8 publications

References 16 publications

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

Wet‐Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production

Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well

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