Fabrication of GaN high-aspect fine nano-hole array structures by hydrogen atmosphere anisotropic thermal etching with ammonia gas

Moriya, Yuta

doi:10.7567/ssdm.2019.f-2-03

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“…They successfully demonstrated a suspended photonic crystal fine structure with a high Q factor by using this method. Moriya et al 27) reported controllability of the etching shape by varying the ammonia/hydrogen flow rate and demonstrated a structure with an aspect ratio of over 16. Recently, we reported selective thermal etching of Ga-polar AlGaN/GaN heterostructures and its impact on the structural and electrical properties.…”

Section: Introductionmentioning

confidence: 99%

Impact of selective thermal etching in mixed H₂/NH₃ atmosphere on crystal quality of AlGaN/GaN heterostructures

Yoshiya

Hoshi

Sugiyama

et al. 2021

Jpn. J. Appl. Phys.

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We investigated the impact of selective thermal etching in a mixed hydrogen and ammonia atmosphere on the crystal quality and electrical characteristics of Ga- and N-polar AlGaN/GaN heterostructures. It was revealed that the etching rate of N-polar GaN is lower than that of Ga-polar GaN under our experimental conditions, and they showed a similar dependence on process temperature with almost the same activation energies. We demonstrated the use of a thin AlGaN layer as a selective etching stopper for both Ga- and N-polarity. The AlGaN stoppers exhibited a smooth surface after etching the GaN layer above them. As for the electrical characteristics, there was no significant degradation in the mobility of the two-dimensional electron gas. The results indicate that selective thermal etching is a promising technique for device fabrication and is especially suitable for precise GaN layer removal when GaN-based devices are fabricated with an epitaxial layer transfer technique.

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Section: Introductionmentioning

confidence: 99%

Impact of selective thermal etching in mixed H₂/NH₃ atmosphere on crystal quality of AlGaN/GaN heterostructures

Yoshiya

Hoshi

Sugiyama

et al. 2021

Jpn. J. Appl. Phys.

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Fabrication of GaN high-aspect fine nano-hole array structures by hydrogen atmosphere anisotropic thermal etching with ammonia gas

Cited by 1 publication

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Impact of selective thermal etching in mixed H₂/NH₃ atmosphere on crystal quality of AlGaN/GaN heterostructures

Impact of selective thermal etching in mixed H₂/NH₃ atmosphere on crystal quality of AlGaN/GaN heterostructures

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Fabrication of GaN high-aspect fine nano-hole array structures by hydrogen atmosphere anisotropic thermal etching with ammonia gas

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Impact of selective thermal etching in mixed H2/NH3 atmosphere on crystal quality of AlGaN/GaN heterostructures

Impact of selective thermal etching in mixed H2/NH3 atmosphere on crystal quality of AlGaN/GaN heterostructures

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Impact of selective thermal etching in mixed H₂/NH₃ atmosphere on crystal quality of AlGaN/GaN heterostructures

Impact of selective thermal etching in mixed H₂/NH₃ atmosphere on crystal quality of AlGaN/GaN heterostructures