Fabrication of grain-oriented PbNb2O6-based high temperature piezoelectric ceramics

Jin, Ruoqi; Ren, Xiaodan; Xu, Zhuo; Yan, Yongke

doi:10.1016/j.ceramint.2023.09.301

Ceramics International

2023

DOI: 10.1016/j.ceramint.2023.09.301

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Fabrication of grain-oriented PbNb2O6-based high temperature piezoelectric ceramics

Ruoqi Jin,

Xiaodan Ren,

Zhuo Xu

et al.

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Cited by 4 publications

References 32 publications

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Effect of bismuth on the dielectric and piezoelectric properties of Pb(1−x)Bi2x/3(Nb0.92Sn0.0375Ti0.0625)2O6 high-temperature piezoelectric ceramics

Huang,

Liu,

Zhang

et al. 2024

J Mater Sci: Mater Electron

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Effect of bismuth on the dielectric and piezoelectric properties of Pb(1−x)Bi2x/3(Nb0.92Sn0.0375Ti0.0625)2O6 high-temperature piezoelectric ceramics

Huang,

Liu,

Zhang

et al. 2024

J Mater Sci: Mater Electron

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Dielectric anomalies and dc-resistivity degradation in PbNb2O6-based ceramics at high temperature

Jin,

Ren,

et al. 2024

Ceramics International

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Excellent temperature stability of piezoelectric properties in PbNb₂O₆‐based ceramics up to 450°C

Jin,

Ren,

et al. 2024

J Am Ceram Soc.

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Dense (Pb0.92Ba0.08)Nb2O6‐xmol% MnO2 with 0.25 wt% TiO2 ceramics with a single orthorhombic phase were synthesized through a conventional solid‐state reaction method. Excellent piezoelectric performance (d33 = 90 pC/N) and low dielectric loss (tan δ = 0.5%) are achieved in Mn‐doped samples. Interestingly, the dielectric anomalies are observed in the temperature range of 300–400°C, which could be completely suppressed through Mn doping. The dielectric anomalies are associated with thermally activated domain wall motion, which could be constrained by the defect dipoles produced by Mn doping. More importantly, all samples experience about 12% performance degradation below 300°C, attributed to an accelerated aging process at elevated temperatures. After thermal aging, the samples exhibit excellent performance stability within the temperature range of 25–450°C, showing no further degradation. The results indicate that the PbNb2O6‐based ceramics are promising high‐temperature piezoelectric materials for piezoelectric devices operating at temperatures up to 450°C.

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Fabrication of grain-oriented PbNb2O6-based high temperature piezoelectric ceramics

Cited by 4 publications

References 32 publications

Effect of bismuth on the dielectric and piezoelectric properties of Pb(1−x)Bi2x/3(Nb0.92Sn0.0375Ti0.0625)2O6 high-temperature piezoelectric ceramics

Effect of bismuth on the dielectric and piezoelectric properties of Pb(1−x)Bi2x/3(Nb0.92Sn0.0375Ti0.0625)2O6 high-temperature piezoelectric ceramics

Dielectric anomalies and dc-resistivity degradation in PbNb2O6-based ceramics at high temperature

Excellent temperature stability of piezoelectric properties in PbNb₂O₆‐based ceramics up to 450°C

Contact Info

Product

Resources

About

Fabrication of grain-oriented PbNb2O6-based high temperature piezoelectric ceramics

Cited by 4 publications

References 32 publications

Effect of bismuth on the dielectric and piezoelectric properties of Pb(1−x)Bi2x/3(Nb0.92Sn0.0375Ti0.0625)2O6 high-temperature piezoelectric ceramics

Effect of bismuth on the dielectric and piezoelectric properties of Pb(1−x)Bi2x/3(Nb0.92Sn0.0375Ti0.0625)2O6 high-temperature piezoelectric ceramics

Dielectric anomalies and dc-resistivity degradation in PbNb2O6-based ceramics at high temperature

Excellent temperature stability of piezoelectric properties in PbNb2O6‐based ceramics up to 450°C

Contact Info

Product

Resources

About

Excellent temperature stability of piezoelectric properties in PbNb₂O₆‐based ceramics up to 450°C