2017
DOI: 10.3788/lop54.120501
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Fabrication of Gratings Used in 976 nm Distributed Feedback Lasers Based on Laser Interference Lithography

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Cited by 2 publications
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“…Bai Yunfeng et al coated a layer of SiO 2 film on GaAs and applied a layer of photoresist on the SiO 2 surface using a homogeniser; then used laser interference lithography to engrave a pattern on the photoresist and used the photoresist as a mask to etch SiO 2 to form a surface hard mask; finally used reactive coupled plasma (ICP) etching to transfer the pattern on the SiO 2 film to GaAs, and then after cleaning, removing SiO 2 and other steps to prepare a 976 nm distributed feedback laser grating with a period of 300 nm, a duty cycle of about 0.4, a slot depth of 100 nm, a flat upper bottom surface and a uniform stripe distribution [11]. (as shown in Figure 3).…”
Section: Laser Interference Lithographymentioning
confidence: 99%
“…Bai Yunfeng et al coated a layer of SiO 2 film on GaAs and applied a layer of photoresist on the SiO 2 surface using a homogeniser; then used laser interference lithography to engrave a pattern on the photoresist and used the photoresist as a mask to etch SiO 2 to form a surface hard mask; finally used reactive coupled plasma (ICP) etching to transfer the pattern on the SiO 2 film to GaAs, and then after cleaning, removing SiO 2 and other steps to prepare a 976 nm distributed feedback laser grating with a period of 300 nm, a duty cycle of about 0.4, a slot depth of 100 nm, a flat upper bottom surface and a uniform stripe distribution [11]. (as shown in Figure 3).…”
Section: Laser Interference Lithographymentioning
confidence: 99%