Fabrication of High Performance Single-Crystalline Silicon Thin Film Transistors on a Polyethylene Terephthalate Substrate

Abstract

A single-crystalline-silicon (c-Si) layer (supported by columns on a starting Si-on-insulator wafer) and a counter polyethylene terephthalate (PET) substrate were placed in close face-to-face contact, and pure water was sandwiched in between the c-Si layer and the PET substrate. The samples formed in this manner were heated on a hot plate at 80°C, and the SOI layer is transferred to PET by the meniscus forces. By applying the proposed transferred technique, high performance c-Si thin-film transistors (TFT) were successfully fabricated on the PET substrate, which showed a field-effect mobility as high as 552 cm 2 V-1 s-1 .