Fabrication of high-quality-factor photonic crystal microcavities in InAsP/InGaAsP membranes

Srinivasan, Kartik; Barclay, Paul E.; Painter, Oskar; Chen, Jianxin; Cho, Alfred Y.

doi:10.1116/1.1701848

Cited by 11 publications

(5 citation statements)

References 16 publications

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“…An inductively-coupled reactive-ion etch was used to transfer the disk pattern through the hard mask and the 252 nm thick semiconductor layer. The disks were then undercut, and the pedestal formed, using HCl:H 2 O solution [16]. A scanning electron microscope (SEM) micrograph of a final device including remaining SiN x cap is shown in Fig.…”

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confidence: 99%

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Surface-plasmon mode hybridization in subwavelength microdisk lasers

Perahia

Alegre

Safavi-Naeini

et al. 2009

Applied Physics Letters

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Hybridization of surface-plasmon and dielectric waveguide whispering-gallery modes are demonstrated in a semiconductor microdisk laser cavity of subwavelength proportions. A metal layer is deposited on top of the semiconductor microdisk, the radius of which is systematically varied to enable mode hybridization between surface-plasmon and dielectric modes. The anticrossing behavior of the two cavity mode types is experimentally observed via photoluminescence spectroscopy and optically pumped lasing action at a wavelength of ϳ 1.3 m is achieved at room temperature. © 2009 American Institute of Physics. ͓doi:10.1063/1.3266843͔In wavelength-scale lasers, the very small number of optical modes and small volume of gain material allows one to probe the subtle and often interesting properties of lasing action. 1 Semiconductor microdisk lasers, in particular, have been actively studied due to their simple geometry and amenability to planar chip-scale integration with microelectronics. [2][3][4] More recently there has been great interest in using surface-plasmon ͑SP͒ modes at a semiconductormetal interface for guiding as well as high intensity and subwavelength optical confinement. 5 There has been significant work on the incorporation of SP waveguides that also act as electrical contacts in mid-infrared quantum cascade lasers, 6 in increasing SP propagation lengths using SP-dielectric waveguide mode hybridization, 7 as well as in creating ultrasmall laser cavities. 8,9 In miniaturizing semiconductor lasers to the nanoscale one encounters several design challenges that must be addressed, such as thermal management, 10,11 proximity of metal contacts to the optical cavity, surface states, 12 and demanding tolerance levels in fabrication. In this letter, we investigate the purposeful integration of a metal contact into a subwavelength whispering-gallery microdisk laser. We show that whispering-gallery SP and dielectric modes hybridize into low loss modes. We predict and map out this hybridization using finite-element-method ͑FEM͒ simulations, and experimentally measure the properties of fabricated microdisk laser cavities with varying levels of mode hybridization.Simulation of the hybrid laser cavities is performed using fully-three-dimensional FEM simulations with azimuthal symmetry. 13 A 250 nm thick semiconductor disk with index n disk = 3.4 and radius R d = 0.65 m is simulated with a centered metal contact of varying radius ͑R m ͒. A schematic of the microdisk device is shown in Fig. 1͑a͒. Silver with a complex refractive index of n Ag = 0.11− i9.5 at = 1.3 m is chosen for the metal layer due to its low optical loss. 14 For this disk size in the 1300 nm wavelength band there occurs a near degeneracy of the transverse-electric-like ͑TE-like͒ whispering-gallery mode ͑WGM͒ with dominant electric field polarization in the plane of the disk and the transversemagnetic-like ͑TM-like͒ mode with dominant electric field normal to the disk plane. A plot of the wavelength and Q-factor of these two resonances is shown in Fig. 2͑a͒ a...

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“…The disks were then undercut, and the pedestal formed, using HCl: H 2 O solution. 16 A scanning electron microscope ͑SEM͒ micrograph of a final device including remaining SiN x cap is shown in Fig. 1͑b͒.…”

mentioning

confidence: 99%

Surface-plasmon mode hybridization in subwavelength microdisk lasers

Perahia

Alegre

Safavi-Naeini

et al. 2009

Applied Physics Letters

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“…2(d)). Next, with the help of photolithography and a hydrochloric acid (HCl) based wet-etching solution, we remove a substantial amount of InP substrate below InGaAsP [22][23][24]. In step e, the areas to be wet-etched are opened in the negative-tone NR9-1500PY photoresist spun at 3500 rpm for 40 s to yield a thickness of 1.5 μm.…”

Section: Device Famentioning

confidence: 99%

Mechanically stable conjugate and suspended lasing membranes of bridged nano-cylinders

Kodigala¹,

Gu²,

Lepetit³

et al. 2017

Opt. Mater. Express

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We present two different fabrication approaches for a suspended lasing membrane with intricate sub-micron patterning for an InGaAsP/InP platform. One approach involves a hydrogen silsesquioxane (HSQ) electron beam lithography resist as a dry etch hard mask and another with an added chromium (Cr) hard mask. The Cr hard mask process allows for fine control over patterned dimensions in comparison to the HSQ mask. This is crucial to both membrane stability and device performance. Both approaches are heavily susceptible to dry etch requirements and the etching window used for membrane release. The techniques presented here are of practical interest to the design of membrane based devices with applications in microfluidic biosensors and flexible laser membranes.

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“…However, at this stage, it is difficult to fabricate very fine InP PCs compared to Si and GaAs-based PCs. InP PCs with a relatively fine structure have been reported as being obtained by using Clz-based inductively coupled plasma (ICP) etching [2]- [4] or chemically assisted ion beam etching [5]- [7]. However, a high substrate temperature of over 200 "C was necessary to etch the InP compounds to desorb the etching products, due to the low volatility of the indium chloride products.…”

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Fine fabrication of gainasp-inp photonic crystal by Hi/Xe ICP etching using electron beam resist mask

Fujita

Sugitatsu

Uesugi

et al. 2004

Digest of Papers. 2004 International Microprocesses and Nanotechnology Conference, 2004.

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We successfully fabricate CaInAsP-lnP photonic crystuls wiih vertical hole (-90 7, swoosh sidewall (cl0 nm) and high uniformity (hi%), by inductively coupledplasrna etching using HIIXe gas with an electron beam resist mask. This can be achieved at a low-temperature condition due to the high volatility and sidewall protection of the iodide product, The etching condition is optimized by controlling the mixture ofXe gas and the applied bias.Photonic crystals (PCs) have attracted much attention due to the possibility of the versatile manipulation of photons by using a photonic band and a photonic band gap (PBG) [I]. In general, plasma etching with high anisotropy and electron beam (EB) lithography with high resolution are used to fabricate semiconductor PCs of which the dimensions are below the submicron scale. In particular, InP-based compound PCs are expected to be applicable to high-performance active photonic devices. However, at this stage, it is difficult to fabricate very fine InP PCs compared to Si and GaAs-based PCs. InP PCs with a relatively fine structure have been reported as being obtained by using Clz-based inductively coupled plasma (ICP) etching [2]-[4] or chemically assisted ion beam etching [5]- [7]. However, a high substrate temperature of over 200 "C was necessary to etch the InP compounds to desorb the etching products, due to the low volatility of the indium chloride products. Under such a high temperature condition, some extra processes, i.e., pattem transfer to dielectric andor metal layers or ion milling, were required to prevent the degradation and deformation of EB resist patterns. These complicated additional processes are considered to degrade the accuracy of the fabrication. Recently, low temperature InP etching at the scale of above 1 pm has been reported by using HVHe ICP [8] and HI/C12 TCP [9]. In this paper, we report on the successful fabrication of GaInAsP-InP PC using an EB resist mask by HI/Xe ICP at 90 "C.The fabrication target of the PC was 2D air-bridge-type GaInAsP PC slab, which is promising structure due to strong photon confinement with a simple geometry. The lattice constant and the radius of air holes were 420 nm and 120 nm, respectively. We prepared an epitaxial wafer on an InP substrate with a GaInAsP slab layer of 245 nm thickness. The etching mask of PC pattern was written on -450-nm-thick positive EB resist of ZEP520. The semiconductor layer was etched by using an ICP etching system . In this experiment, the ICP power was fixed at 80 W, to avoid any unexpected thermal effect of the ICP, The flow rate of HI and the gas pressure were reduced to be 0.4 sccm and 0.3 Pa, respectively, to suppress the excess chemical reaction of HI. However, in the case of using only HI as an etching gas, the cross-section of the holes became bow-shaped and the sidewall angle was not vertical as shown in Fig. 1Ca). This is due to the side etching inside the hole by the iodine radical, which is expected to accelerate the chemical-like etching of GaInAsP. To suppress the chemical reaction ...

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Fabrication of high-quality-factor photonic crystal microcavities in InAsP/InGaAsP membranes

Cited by 11 publications

References 16 publications

Surface-plasmon mode hybridization in subwavelength microdisk lasers

Surface-plasmon mode hybridization in subwavelength microdisk lasers

Mechanically stable conjugate and suspended lasing membranes of bridged nano-cylinders

Fine fabrication of gainasp-inp photonic crystal by Hi/Xe ICP etching using electron beam resist mask

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