We have combined silicon micromachining technology with planar circuits to fabricate room-temperature niobium microbolometers for millimeter-wave detection. In this type of detector, a thin niobium film, with a dimension much smaller than the wavelength and fabricated on a 1 m thick Si 3 N 4 membrane, acts both as a radiation absorber and temperature sensor. Incident radiation is coupled into the microbolometer by a 0.37 dipole antenna of center frequency 95 GHz with a 3 dB bandwidth of 15%, which is impedance matched with the Nb film. An electrical noise equivalent power ͑NEP͒ of 4.5ϫ10 Ϫ10 W/ͱHz has been achieved. This is comparable to the best commercial room-temperature millimeter-wave detectors.