In this paper, boron-doped dense 6H-SiC ceramics was fabricated by the high-temperature physical vapor transport (HTPVT) method. The effect of B doping on the crystal structure stability of 6H-SiC was investigated based on density functional theory (DFT). The results show that B doping can be realized even under thermodynamical equilibrium conditions. Nevertheless, it is found that the B doping effects on the (0001) of Si-plane and (000-1) of C-plane are significantly different. The doping experiments demonstrated that B can observably change the crystal growth morphology, leading to the formation of elongated 6H-SiC crystals.