Fabrication of Highly Transparent and Conductive Indium–Tin Oxide Thin Films with a High Figure of Merit via Solution Processing

Chen, Zhangxian; Li, Wanchao; Li, Ran; Zhang, Yunfeng; Xu, Guodong; Cheng, Hansong

doi:10.1021/la4033282

Cited by 301 publications

(186 citation statements)

References 46 publications

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“…All samples were sputter-cleaned using an Ar 1+ ion gun operated at 500V for 10 minutes with a sputter current of 2-3 µA. Figure S1(a) shows the XPS spectra of the Cu-precursor (Cu(acac) 2 ) itself, which matches previously published data on (Cu(acac) 2 ) [1]. The Copper region of as grown samples shows Cu in a +1 oxidation state with a mixture of the unreacted Cu precursor present (Fig S1(b)).…”

supporting

confidence: 76%

“…Currently commercially available n-type TCMs, such as indium tin oxide (ITO), possess conductivities as high as 1000 S/cm with transparencies greater than 80%. 1 Potential applications that require p-type materials with similar properties include transparent p-n junctions, which would allow for fully-transparent displays. 2 Alternatively, they can be used to minimize shunting as hole injection/extraction layers in light-emitting diodes/solar cells.…”

mentioning

confidence: 99%

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Spray pyrolysis growth of a high figure of merit, nano-crystalline, p-type transparent conducting material at low temperature

Farrell

Norton

O'Dowd

et al. 2015

Applied Physics Letters

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In this letter we demonstrate a low temperature (≈ 345 • C) growth method for Cu deficient CuCrO 2 performed by spray pyrolysis using metal-organic precursors and a simple air blast nozzle. Smooth films were grown on glass substrates with a highest conductivity of 12 S/cm. The most conductive samples retain transparencies above 55% resulting in a figure of merit as high as 350 µS, which is the best performing p-type transparent conducting material grown by solution methods to date. Remarkably despite the nano-crystallinity of the films, properties comparable with crystalline CuCrO 2 are observed. No postannealing of the films is required in contrast to previous reports on crystalline material. The low processing temperature of this method means the material can be deposited on flexible substrates. As this is a solution based technique it is more attractive to industry as physical vapour deposition methods are slow and costly in comparison.p-type transparent conducting materials (TCMs) are sought after for optoelectronic devices. Currently commercially available n-type TCMs, such as indium tin oxide (ITO), possess conductivities as high as 1000 S/cm with transparencies greater than 80%. 1 Potential applications that require p-type materials with similar properties include transparent p-n junctions, which would allow for fully-transparent displays. 2 Alternatively, they can be used to minimize shunting as hole injection/extraction layers in light-emitting diodes/solar cells. 3,4 The main interest in this field originated from the potential of the delafossites with the A 1+ B 3+ O 2 lattice structure first highlighted in 1997 when CuAlO 2 was reported to exhibit ptype conductivity while maintaining high transparency. 5 Since then the field has extended to other materials such as oxychalcogenides, spinels and α-Cr 2 O 3 . 6-9 One of the delafossites, CuCrO 2 , has shown promise as a p-type TCM due to reports of high conductivity when doped with Mg. 10 However this is typically only achieved by physical vapour deposition (PVD) which is a relatively slow and costly technique in comparison to other depostion methods. CuCrO 2 has also been grown by chemical vapour deposition (CVD) using the metal-organic Acetylacetonate (acac) precursors Cr(acac) 3 and Cu(acac) 2 at 550 • C, resulting in polycrystalline films with conductivity of 0.86 S/cm (figure of merit (FOM) ≈ 45 µS). 11 Spray pyrolysis (SP) is an inexpensive technique that is suited to depositing films over a large area. Mg-doped films of CuCrO 2 have been synthesized by SP using the same acac precursors with the Mg(acac) 2 precursor for doping. Only after postannealing at 700 • C did they achieve conductivities of 0.6-1 S/cm. 12,13 CuCrO 2 :Zn grown by solgel processing show conductivities of around 0.47 S/cm after two postannealing steps. 14 The high temperature required by these methods is a major drawback for using a) Electronic mail: lefarrel@tcd.ie the material in practical devices. In this letter SP was used to grow thin (50-100 nm) Cu deficient CuCrO 2 film...

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supporting

confidence: 76%

mentioning

confidence: 99%

Spray pyrolysis growth of a high figure of merit, nano-crystalline, p-type transparent conducting material at low temperature

Farrell

Norton

O'Dowd

et al. 2015

Applied Physics Letters

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“…[1][2][3][4][5] Indium tin oxide (ITO) has unambiguously been the most widely used TCE material because of its optical transparency, thermal/chemical stability and device compatibility, coupled with its well-established fabrication processes. 6,7 However, the brittle nature of ITO might limit its role in future devices. 8 For instance, 150 nm-thick amorphous-ITO (a-ITO) films or 100 nm-thick crystalline-ITO (c-ITO) mounted on a plastic film (thickness: 100 μm) would crack with a bending radius of o3 mm.…”

Section: Introductionmentioning

confidence: 99%

Hybrid crystalline-ITO/metal nanowire mesh transparent electrodes and their application for highly flexible perovskite solar cells

Jeong

Jin

et al. 2016

NPG Asia Mater

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Here, we propose crystalline indium tin oxide/metal nanowire composite electrode (c-ITO/metal NW-GFRHybrimer) films as a robust platform for flexible optoelectronic devices. A very thin c-ITO overcoating layer was introduced to the surface-embedded metal nanowire (NW) network. The c-ITO/metal NW-GFRHybrimer films exhibited outstanding mechanical flexibility, excellent optoelectrical properties and thermal/chemical robustness. Highly flexible and efficient metal halide perovskite solar cells were fabricated on the films. The devices on the c-ITO/AgNW-and c-ITO/CuNW-GFRHybrimer films exhibited power conversion efficiency values of 14.15% and 12.95%, respectively. A synergetic combination of the thin c-ITO layer and the metal NW mesh transparent conducting electrode will be beneficial for use in flexible optoelectronic applications.

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“…1 The industry standard material is indium tin oxide (ITO) due to its high conductivity (≈ 1000 Scm −1 ) and transparency (>80%). 2 The development of indium gallium zinc oxide (IGZO), a ternary oxide retaining mobility in its amorphous state, has allowed for commercial products utilizing IGZO as a transparent thin film transistor (TTFT) in the backplane of flat panel displays. 3 IGZO has been essential for high dpi, low power, and 4 K high resolution displays.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of nanocrystalline Cu deficient CuCrO₂ – a high figure of merit p-type transparent semiconductor

et al. 2016

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The delafossite structured CuCrO 2 system is well known as one of the best performing p-type transparent conducting oxides. In this paper the details of a low temperature facile growth method for CuCrO 2 is described. The dependence of the growth on the precursors, the temperature and oxygen partial pressure are examined. The decomposition routes are critical to obtain the best performing films. The thermopower and electrical measurements indicate p-type films with conductivity ranging from 1-12 Scm −1 depending on the growth conditions. This p-type conductivity is retained despite the nanocrystallinity of the films. The figure of merit of these films can be as high as 350 µS, which is the best performing p-type TCO by solution methods to date. The optical properties are also investigated using ellipsometry and UV-Vis spectroscopy.

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Fabrication of Highly Transparent and Conductive Indium–Tin Oxide Thin Films with a High Figure of Merit via Solution Processing

Cited by 301 publications

References 46 publications

Spray pyrolysis growth of a high figure of merit, nano-crystalline, p-type transparent conducting material at low temperature

Spray pyrolysis growth of a high figure of merit, nano-crystalline, p-type transparent conducting material at low temperature

Hybrid crystalline-ITO/metal nanowire mesh transparent electrodes and their application for highly flexible perovskite solar cells

Synthesis of nanocrystalline Cu deficient CuCrO₂ – a high figure of merit p-type transparent semiconductor

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Fabrication of Highly Transparent and Conductive Indium–Tin Oxide Thin Films with a High Figure of Merit via Solution Processing

Cited by 301 publications

References 46 publications

Spray pyrolysis growth of a high figure of merit, nano-crystalline, p-type transparent conducting material at low temperature

Spray pyrolysis growth of a high figure of merit, nano-crystalline, p-type transparent conducting material at low temperature

Hybrid crystalline-ITO/metal nanowire mesh transparent electrodes and their application for highly flexible perovskite solar cells

Synthesis of nanocrystalline Cu deficient CuCrO2 – a high figure of merit p-type transparent semiconductor

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Synthesis of nanocrystalline Cu deficient CuCrO₂ – a high figure of merit p-type transparent semiconductor