Fabrication of Highly Transparent Nanowire Transistors with One-Step-Processed Graphene Gate–Source–Drain Electrodes

Abstract

We report the fabrication of a highly transparent nanowire transistor using graphene as the gate and source-drain electrodes. Graphene gatesource-drain electrodes were simultaneously formed by a single-step transfer process. The graphene electrode and the nanowire channel exhibited near-ohmic contact characteristics. The threshold voltage, subthreshold slope, and mobility of the fabricated top-gate-structural In 2 O 3 nanowire transistor with graphene gate-source-drain electrodes were À4:54 V, 0.43 V/dec, and 78 cm 2 /(VÁs) respectively. The optical transmissions in the region that contained nanowire transistors on the quartz substrate were 88.5-90.3% in the 400-780 nm wavelength range.

Atomic Hydrogen Annealing of Graphene on InAs Surfaces and Nanowires: Interface and Morphology Control for Optoelectronics and Quantum Technologies

“…Metallic graphene and semiconducting III–V compound NWs are two classes of nanomaterials with very different properties. The inertness, extreme conductivity, − optical transparency, − and mechanical flexibility − of the graphene have made it a good candidate to be widely used as a potential high-performance electrode − and protective layer. , This can be combined with the excellent optical and transport properties of the III–V semiconductors, , with promises for optoelectronic and photovoltaic as well as quantum technology applications. , Combining graphene with semiconductor NWs has been resulted in a wide range of interesting applications, such as transparent organic single crystal field-effect transistors, NW devices with graphene electrodes, ,− high-responsivity graphene/InAs NW heterojunction photodetectors, graphene-coated waveguides, and photonic integrated sources . To realize the full performance potential for these and many other applications, both morphology and graphene/semiconductor interface must be controlled.…”

Substrate‐Dependent Differences in the Crystal Structures and Optical Properties of ZnSe Nanowires

“…Because of their numerous applications, the structural and optical properties of ZnSe nanowires grown on Si, Al 2 O 3 , and SiO 2 substrates have been previously investigated. Several studies have explored the growth of In Ga 1− As, SiC, and In 2 O 3 nanowires on graphene [16][17][18] but none has studied the direct growth of ZnSe nanowires on graphene. Thus, observations of the crystal and optical properties of ZnSe nanowires grown on graphene thin films are of particular interest.…”

“…Thus, observations of the crystal and optical properties of ZnSe nanowires grown on graphene thin films are of particular interest. The advantage of growing nanowires directly on graphene is that it facilitates the formation of Ohmic contacts between the nanowires and graphene [17,18]. In addition, hybrid graphene-ZnSe nanowire structures could be used in flexible and/or transparent displays.…”