Fabrication of horizontally grown silicon nanowires using a thin aluminum film as a catalyst

Mohammed, Hafeezuddin; Abu-Safe, Husam H.; Newton, Benjamin; El-Ghazaly, S.M.; Naseem, Hameed A.

doi:10.1016/j.tsf.2010.08.155

Cited by 3 publications

(2 citation statements)

References 12 publications

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“…Once the vertical silicon NWs are introduced in the semiconductor industry, a whole new architecture will be required to fabricate an electronic device. Incorporating these NWs in the current architecture will be more convenient and feasible if the silicon NWs are grown horizontally [35,[74][75][76][77].…”

Section: Structure Design and Simulationsmentioning

confidence: 99%

Ultra-thin broadband solar absorber based on stadium-shaped silicon nanowire arrays

Mortazavifar

Salehi

Shahraki

et al. 2022

Front. Optoelectron.

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This paper investigates how the dimensions and arrangements of stadium silicon nanowires (NWs) affect their absorption properties. Compared to other NWs, the structure proposed here has a simple geometry, while its absorption rate is comparable to that of very complex structures. It is shown that changing the cross-section of NW from circular (or rectangular) to a stadium shape leads to change in the position and the number of absorption modes of the NW. In a special case, these modes result in the maximum absorption inside NWs. Another method used in this paper to attain broadband absorption is utilization of multiple NWs which have different geometries. However, the maximum enhancement is achieved using non-close packed NW. These structures can support more cavity modes, while NW scattering leads to broadening of the absorption spectra. All the structures are optimized using particle swarm optimizations. Using these optimized structures, it is viable to enhance the absorption by solar cells without introducing more absorbent materials. Graphical Abstract

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Section: Structure Design and Simulationsmentioning

confidence: 99%

Ultra-thin broadband solar absorber based on stadium-shaped silicon nanowire arrays

Mortazavifar

Salehi

Shahraki

et al. 2022

Front. Optoelectron.

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“…Recently horizontal silicon nanowires (SiNWs) has been reported using a thin aluminum layer as a catalyst [1,2]. The nanowires were grown at the grain boundaries of the aluminum layer that was deposited on a silicon wafer.…”

Section: Introductionmentioning

confidence: 99%

TEM Investigation of Horizontal-Grown Silicon Nanowires

Abu-Safe

2011

AMR

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Horizontal silicon nanowires were grown using thermal annealing of thin layers of aluminum on silicon substrates. The template to grow these wires was the thin aluminum layer. As the samples reached the eutectic temperature during annealing, silicon dissolved rapidly in the aluminum layer and deposited at the grain boundary in a form of silicon nanowires. Cross sectional TEM analysis indicated the crystalline structure of these wires.

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Aluminum-catalyzed silicon nanowires: Growth methods, properties, and applications

Hainey

Redwing

2016

Applied Physics Reviews

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Metal-mediated vapor-liquid-solid (VLS) growth is a promising approach for the fabrication of silicon nanowires, although residual metal incorporation into the nanowires during growth can adversely impact electronic properties particularly when metals such as gold and copper are utilized. Aluminum, which acts as a shallow acceptor in silicon, is therefore of significant interest for the growth of p-type silicon nanowires but has presented challenges due to its propensity for oxidation. This paper summarizes the key aspects of aluminum-catalyzed nanowire growth along with wire properties and device results. In the first section, aluminum-catalyzed nanowire growth is discussed with a specific emphasis on methods to mitigate aluminum oxide formation. Next, the influence of growth parameters such as growth temperature, precursor partial pressure, and hydrogen partial pressure on nanowire morphology is discussed, followed by a brief review of the growth of templated and patterned arrays of nanowires. Aluminum incorporation into the nanowires is then discussed in detail, including measurements of the aluminum concentration within wires using atom probe tomography and assessment of electrical properties by four point resistance measurements. Finally, the use of aluminum-catalyzed VLS growth for device fabrication is reviewed including results on single-wire radial p-n junction solar cells and planar solar cells fabricated with nanowire/nanopyramid texturing.

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Fabrication of horizontally grown silicon nanowires using a thin aluminum film as a catalyst

Cited by 3 publications

References 12 publications

Ultra-thin broadband solar absorber based on stadium-shaped silicon nanowire arrays

Ultra-thin broadband solar absorber based on stadium-shaped silicon nanowire arrays

TEM Investigation of Horizontal-Grown Silicon Nanowires

Aluminum-catalyzed silicon nanowires: Growth methods, properties, and applications

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