Fabrication of In<inf>0.52</inf>Al<inf>0.48</inf>As/In<inf>0.53</inf>Ga<inf>0.47</inf>As p-HEMT utilizing Ne-based atomic layer etching

Abstract

The characteristics of 0.15 Ilm lllo.s2Alo.48AslIllo.s3Gao.47As pseudomorphic high electron mobility transistors (p-HEMTs) fabricated using the Nebased atomic layer etching (ALET) technology and the Arbased conventional reactive ion etching (RIE) technology are reported. Compared to the p-HEMTs fabricated using the Ar-based RIE, the p-HEMTs fabricated using the ALET exhibited improved device performance including trasconductance (G M =I.38 S/mm), IoN/IoFF ratio (1.18X 10 4 ), and cutoff frequency (f T =233 GHz), mainly due to the extremely low plasma-induced damage of the ALET to the Schottky gate area. Keywords-Atomic layer etching (ALET); peudomorphic high electron mobility transistor (p-HEMT), Io,./IoFF ratio I.