Fabrication of Iron Pyrite Thin Films and Photovoltaic Devices by Sulfurization in Electrodeposition Method

Abstract

Iron pyrite is a cheap, stable, non-toxic, and earth-abundant material that has great potential in the field of photovoltaics. Electrochemical deposition is a low-cost method, which is also suitable for large-scale preparation of iron pyrite solar cells. In this work, we prepared iron pyrite films by electrochemical deposition with thiourea and explored the effect of sulfurization on the synthesis of high-quality iron pyrite films. Upon sulfurization, the amorphous precursor film becomes crystallized iron pyrite film. Optical and electrical characterization show that its band gap is 0.89 eV, and it is an n type semiconductor with a carrier concentration of 3.01 × 1019 cm−3. The corresponding photovoltaic device shows light response. This work suggests that sulfurization is essential in the electrochemical preparation for fabricating pure iron pyrite films, and therefore for low-cost and large-scale production of iron pyrite solar cells.

Biological Photonic Devices Designed for the Purpose of Bio-Imaging with Bio-Diagnosis

“…Such extended-distance transmission of light carries substantial possibilities for biological medical applications necessitating deep light penetration, such as deep tissue diagnosis as well as imaging. Other functional photonic/optical-based biomaterials were developed and applied in the theragnostic vascular diseases [143][144][145][146][147][148][149], urinary system [150], anticancer/translational medicine/characterizations [114,[151][152][153][154], and regenerative medicine applications [145,[155][156][157][158].…”

Inherent internal p-n junction assisted single layered n-type iron pyrite solar cell

“…Additionally, there are two key factors to consider while selecting the solar cell absorber layer: (i) the material should absorb maximum photons, and (ii) it should be able to extract the carriers from the solar cell into the external circuit. In this regard, iron pyrite (FeS 2 ) has been identified, which is an inexpensive, widely available, and naturally pure material [21]. Further, it has the merits of a high absorption coefficient (5 × 10 5 cm −1 ), non-toxicity, high carrier mobility (200-300 cm 2 V −1 S −1 ), abundance on Earth, an acceptable bandgap (0.9-0.95 eV), and low processing cost that make it suitable for PV applications [22][23][24][25].…”

Формирование Диэлектрических Подложек Для Магнетрон-Ного Осаждения Силицидных Покрытий

“…Интенсивные иследования свойств диоксида кремния связаны с применением SiO 2 в микроэлектронике, оптоэлектронике [1] и акустоэлектронике [2][3][4]. Основным материалом твердотельной электроники на сегодняшний день является кремний, что обусловлено не только его собственными уникальными свойствами, но и возмож-ностью создания на его поверхности однородной пленки высококачественного диэлектрика [4][5][6][7][8][9][10][11][12][13][14]. Термический диоксид кремния является основным диэлектриком в современных полупроводниковых приборах и интегральных схемах [15,16].…”