Fabrication of ITO thin films by filtered cathodic vacuum arc deposition

Chen, B.J.; Sun, Xiao Wei; Tay, Beng Kang

doi:10.1016/j.mseb.2003.09.046

Cited by 31 publications

(22 citation statements)

References 15 publications

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“…It is observed that the extinction coefficient decreases with increasing CdO buffer layer thickness. This is expected on the basis of equation (2). It is also clear that the refractive index decreases with increasing CdO buffer layer thickness as shown in the recorded refractive indices of 2.15, 2.12 and 2.06 for the CdO buffer layer thicknesses of 25, 50 and 75 nm, respectively.…”

Section: Effect Of Cdo Buffer Layer Thicknesssupporting

confidence: 71%

“…Transparent and conductive tin-doped indium oxide films referred to as ITO films have been applied in several optoelectronic devices and technological applications, such as coatings in thermal collectors and mirrors, flat panel displays, thin film transistors, sensors, liquid crystal displays, solar cells and energy-efficient window systems [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

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Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

Hussein

Ali

2008

Science and Technology of Advanced Materials

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A thin buffer layer of cadmium oxide (CdO) was used to enhance the optical and electrical properties of indium tin oxide (ITO) films prepared by an electron-beam evaporation technique. The effects of the thickness and heat treatment of the CdO layer on the structural, optical and electrical properties of ITO films were carried out. It was found that the CdO layer with a thickness of 25 nm results in an optimum transmittance of 70% in the visible region and an optimum resistivity of 5.1 × 10 −3 cm at room temperature. The effect of heat treatment on the CdO buffer layer with a thickness of 25 nm was considered to improve the optoelectronic properties of the formed ITO films. With increasing annealing temperature, the crystallinity of ITO films seemed to improve, enhancing some physical properties, such as film transmittance and conductivity. ITO films deposited onto a CdO buffer layer heated at 450• C showed a maximum transmittance of 91% in the visible and near-infrared regions of the spectrum associated with the highest optical energy gap of 3.61 eV and electrical resistivity of 4.45 × 10 −4 cm at room temperature. Other optical parameters, such as refractive index, extinction coefficient, dielectric constant, dispersion energy, single effective oscillator energy, packing density and free carrier concentration, were also studied.

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Section: Effect Of Cdo Buffer Layer Thicknesssupporting

confidence: 71%

Section: Introductionmentioning

confidence: 99%

Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

Hussein

Ali

2008

Science and Technology of Advanced Materials

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“…The few exceptions include Sychkova et al [24], who reported both optical and electrical properties of 9-80 nm ITO films deposited by pulsed DC sputtering varied with thickness and showed a general increase in resistivity with decrease in film thickness [24]. Other notable studies on ultra-thin ITO films using various deposition techniques include the following: Chen et al who used filtered cathodic vacuum arc (FCVA) to deposit 30-50 nm on heated quartz and Si substrates [25]; Tseng and Lo, who used DC magnetron sputter for 34.71-71.64 nm ITO film on PET (polyethylene terephthalate) [26]; Kim et al who used RF magnetron sputter for films between 40 and 280 nm deposited on PMMA substrate heated at 70°C [27]; Alam and Cameron, who used sol-gel process for 50-250 nm film deposited on titanium dioxide film [20]; and Betz et al who used planar DC magnetron sputtering for 50, 100 and 300 nm films on glass substrates [28]. The results from these few thin TCO studies reveal a pattern in which resistivity increases rapidly as film thickness decreases from 50 to 10 nm.…”

Section: Introductionmentioning

confidence: 99%

Limitations of ultra-thin transparent conducting oxides for integration into plasmonic-enhanced thin-film solar photovoltaic devices

Gwamuri

Vora

Khanal

et al. 2015

Mater Renew Sustain Energy

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This study investigates ultra-thin transparent conducting oxides (TCO) of indium tin oxide (ITO), aluminum-doped zinc oxide (AZO) and zinc oxide (ZnO) to determine their viability as candidate materials for use in plasmonic-enhanced thin-film amorphous silicon solar photovoltaic (PV) devices. First a sensitivity analysis of the optical absorption for the intrinsic layer of a nano-disk patterned thin-film amorphous silicon-based solar cell as a function of TCO thickness (10-50 nm) was performed by simulation. These simulation results were then used to guide the design of the experimental work which investigated both optical and electrical properties of ultra-thin (10 nm on average) films simultaneously deposited on both glass and silicon substrates using conventional rf sputtering. The effects of deposition and post-processing parameters on material properties of ITO, AZO and ZnO ultrathin TCOs were probed and the suitability of TCOs for integration into plasmonic-enhanced thin-film solar PV devices was assessed. The results show that ultra-thin TCOs present a number of challenges for use as thin top contacts on plasmonic-enhanced PV devices: (1) optical and electrical parameters differ greatly from those of thicker (bulk) films deposited under the same conditions, (2) the films are delicate due to their thickness, requiring very long annealing times to prevent cracking, and (3) reactive gases require careful monitoring to maintain stoichiometry. The results presented here found a trade-off between conductivity and transparency of the deposited films. Although the sub 50 nm TCO films investigated exhibited desirable optical properties (transmittance greater than 80 %), their resistivity was too high to be considered as materials for the top contact of conventional PV devices. Future work is necessary to improve thin TCO properties, or alternative materials, and geometries are needed in plasmonic-based amorphous silicon solar cells. The stability of ultra-thin TCO films also needs to be experimentally investigated under normal device operating conditions.

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“…For detailed information on ITO and other TCOs, see Exharhos' review [122]. ITO can be deposited by various techniques, including filtered cathodic arcs, for which high transmittance of 495% in the visible spectrum and a reasonable resistivity of 6.6 m m have been obtained [123]. Although there is plenty of indium on planet Earth, the great demand has skyrocketed the price of the metal (tenfold from 2002 to 2006), triggering research and development of alternative materials and their deposition technologies.…”

Section: Transparent Conductor Solar Energy Electronic and Photocamentioning

confidence: 99%

Some Applications of Cathodic Arc Coatings

Anders

2008

Cathodic Arcs

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Fabrication of ITO thin films by filtered cathodic vacuum arc deposition

Cited by 31 publications

References 15 publications

Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

Limitations of ultra-thin transparent conducting oxides for integration into plasmonic-enhanced thin-film solar photovoltaic devices

Some Applications of Cathodic Arc Coatings

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