Fabrication of large area hexagonal boron nitride thin films for bendable capacitors

Guo, Ning; Wei, Jinquan; Jia, Yi; Sun, Huanhuan; Wang, Yuhang; Zhao, Kehan; Shi, Xinzheng; Zhang, Liuwan; Li, Xinming; Cao, Anyuan; Zhu, Hongwei; Wang, Kunlin; Wu, Dehai

doi:10.1007/s12274-013-0336-4

Cited by 60 publications

(46 citation statements)

References 29 publications

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“…After that, N. Guo et al [113] reported that the DT conduction at low fields could be maintained in thick (>18 nm) h-BN stacks, but the I-V curves and atomically flat surface of the stack in this work are not conclusive, making necessary a corroboration of this finding.…”

Section: Accepted Manuscriptmentioning

confidence: 57%

“…For these reasons, the use of alternative growth techniques like CVD [74][75][76][77][78][79][80] and sputtering [68][69] are preferred in industrial applications, even if the quality of the h-BN stacks produced is lower. Some of the most common defects in large area h-BN stacks are: i) are lattice distortions (including dangling bonds [123], non-hexagonal bonding [124] and impurities or undesired doping [125]), ii) thickness fluctuations [122], iii) wrinkles [126] and iv) cracks [113]. All these local defects in h-BN can notably alter its electronic properties, impoverishing the variability and performance of the whole device.…”

Section: -Use Of H-bn As Dielectricmentioning

confidence: 99%

“…Several reports measured the dielectric strength of h-BN stacks synthesized following any of the processes described in section 2, and the values reported range between 1.5 and 12 MV/cm [63,113,122,[175][176][177] (see Table 1). …”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…Moreover, the topographic roughness, intrinsic doping and chemical reactivity of the graphene channel was also greatly improved. Mayorov et al [107] observed ballistic transport up to ~ 3 µm at low temperature, F. Guinea and colleagues [108] reported that the conductivity of graphene on h-BN can be capacitors with enhanced performance [113]. Actually, capacitance effect is one of the most required properties of dielectrics in electronic devices, as it can provide functionalities like charge storage and electronic resistance modulation.…”

Section: -Introduction Of H-bn In Electronic Devicesmentioning

confidence: 99%

See 3 more Smart Citations

On the use of two dimensional hexagonal boron nitride as dielectric

Hui

Pan

Shi

et al. 2016

Microelectronic Engineering

110

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Section: Accepted Manuscriptmentioning

confidence: 57%

Section: -Use Of H-bn As Dielectricmentioning

confidence: 99%

Section: Accepted Manuscriptmentioning

confidence: 99%

Section: -Introduction Of H-bn In Electronic Devicesmentioning

confidence: 99%

See 2 more Smart Citations

On the use of two dimensional hexagonal boron nitride as dielectric

Hui

Pan

Shi

et al. 2016

Microelectronic Engineering

110

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“…With its highly insulative properties, atomically smooth surface, and closely matched lattice parameters to graphene; h-BN has been demonstrated as a key materials in photovoltaic [1], capacitor [2], and high speed transistor applications [3]. As the the morphology and purity of the catalytic surface plays a critical role on the shape, size, and growth kintectics of the 2D nanomaterial, and ultimately its physical/electronic properties; optimization of hBN growth is an area of intensive study.…”

Section: Introductionmentioning

confidence: 99%

Surface energy controlled growth of single crystalline two-dimensional hexagonal (h)-boron nitride

Griep

Tay

Tumlin

et al. 2014

14th IEEE International Conference on Nanotechnology

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Two-dimensional (2D) nanomaterials, including graphene and boron nitride (BN), have been of intense interest in recent years due to their exceptional electronic, thermal, and mechanical properties. Tailoring these novel properties to their maximum potential requires precise control of the atomic layer growth process. In recent years, catalytic growth of 2-D nanomaterials using chemical vapor deposition (CVD) process has emerged as an attractive approach due to their low-cost, scalalibility, and ability to transfer the grown materials on various substrates. In this approach, the morphology and purity of the catalytic surface plays a critical role on the shape, size, and growth kintectics of the 2D nanomaterial. In this work, we present the results of our systematic studies of the role of catalytic surface morphology on the shape and domain size of CVD grown hexagonal (h)-BN films. The present work clearly demonstrates that the presence of surface roghness in the form of ridges leads to a preferential growth of smalldomain triangular BN sheets. A 100-fold reduction in the surfcae roughness leads to increased domain BN triangles, eventually transitioning to large-domain hexagonal shaped BN sheets.I.

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Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

Pan

Xiao

et al. 2017

Adv Funct Materials

268

280

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The use of two dimensional (2D) materials to improve the capabilities of electronic devices is a promising strategy that has recently gained much interest in both academy and industry. While the research on 2D metallic and semiconducting materials is well established, the knowledge and 2 applications of 2D insulators are still very scarce. In this report we study the presence of resistive switching (RS) in multilayer hexagonal boron nitride (h-BN) using different electrode materials, and we engineer a family of h-BN based resistive random access memories with tunable capabilities.The devices show the coexistence of forming-free bipolar and threshold type RS with low operation voltages down to 0.4 V, high current on/off ratios up to 10 6 , long retention times above 10 hours, as well as low variability. The RS is driven by the grain boundaries (GBs) in the polycrystalline h-BN stack, which allow the penetration of metallic ions from adjacent electrodes. This reaction can be boosted by the generation of B vacancies, which is more abundant at the GBs. To the best of our knowledge, h-BN is the first 2D material showing the coexistance of bipolar and threshold RS, which may open the door to additional functionalities and applications.Received: ((will be filled in by the editorial staff))Revised: ((will be filled in by the editorial staff))

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Fabrication of large area hexagonal boron nitride thin films for bendable capacitors

Cited by 60 publications

References 29 publications

On the use of two dimensional hexagonal boron nitride as dielectric

On the use of two dimensional hexagonal boron nitride as dielectric

Surface energy controlled growth of single crystalline two-dimensional hexagonal (h)-boron nitride

Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

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