2011
DOI: 10.1080/00150193.2011.577983
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Fabrication of LiNbO3/LiTaO3Superlattice Thin Films and Their Second Harmonic Generation Characteristics

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Cited by 4 publications
(2 citation statements)
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“…LN films on C-sapphire substrates were deposited also by PLD, using a KrF excimer laser with 248 nm-wavelength and using LiNbO 3 congruent crystal as a target [33][34][35]. The films were deposited at 550 • C. The oxygen pressure and laser power were 50 mTorr and 2 J cm −2 , respectively.…”
Section: Methodsmentioning
confidence: 99%
“…LN films on C-sapphire substrates were deposited also by PLD, using a KrF excimer laser with 248 nm-wavelength and using LiNbO 3 congruent crystal as a target [33][34][35]. The films were deposited at 550 • C. The oxygen pressure and laser power were 50 mTorr and 2 J cm −2 , respectively.…”
Section: Methodsmentioning
confidence: 99%
“…The first reports on the growth of c ‐axis‐oriented LN films by liquid phase epitaxy on an LT substrate and by RF sputtering on C ‐sapphire substrates appeared in early seventies . Since then these substrates were widely studied for the growth of the Z ‐LN and Z ‐LT films by different methods: LPE, epitaxial growth by melting, RF sputtering pulsed laser deposition (PLD), molecular beam epitaxy (MBE), metal organic, and aqueous precursor solutions, sol–gel, spin coating, microwave oven method, and chemical vapor deposition (CVD) and its derivatives such as thermal plasma CVD, pulsed metal–organic CVD (MOCVD), pulsed‐injection (PI) MOCVD, spray MOCVD, atmospheric pressure aerosol MOCVD, solid source flash evaporation, combinatorial high‐vacuum CVD, atomic layer deposition (ALD), etc. In the following sections, we summarize the problems and the applied strategies for the optimization of growth of high‐quality LN–LT layers.…”
Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning
confidence: 99%