Fabrication of Low Resistivity Nb-doped TiO<sub>2</sub> Transparent Conductive Polycrystalline Films on Glass by Reactive Sputtering

Yamada, Naoomi; Hitosugi, Taro; Hoang, Ngoc Lam Huong; Furubayashi, Yutaka; Hirose, Yasushi; Shimada, Toshihiro; Hasegawa, Tetsuya

doi:10.1143/jjap.46.5275

Cited by 91 publications

(67 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These results are in good agreement with literature data for TiO 2 :Nb films made by sputtering [15,16]. Furthermore, the resistivity obtained from the analysis of the optical measurements is close to the measured dc value.…”

Section: Electrical Conductivitysupporting

confidence: 91%

“…A recently discovered alternative is doped TiO 2 [3,4], which is different from the other TCOs in that conduction takes place in the d-band rather than in the s-band [5,6]. Earlier work on TCO-type TiO 2 :Nb has employed pulsed laser deposition [3,[7][8][9][10][11][12][13][14], rf magnetron sputtering [15], and dc magnetron sputtering [11,[16][17][18]. The sputtered films were post-treated in H 2 or vacuum at 400 to 600 °C for 1 h, in order to exhibit favorable electrical properties.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optical properties of sputter deposited transparent and conducting TiO2:Nb films

2009

View full text Add to dashboard Cite

Transparent and conducting thin films of TiO 2 :Nb were prepared on glass by reactive dc magnetron sputtering in Ar + O 2 . Post deposition annealing in vacuum at 450 o C led to good electrical conductivity and optical transparency. The optical properties in the subbandgap region were in good agreement with Drude free electron theory, which accounts for intraband absorption. The band gap of the films was found to be in the range of 3.3 to 3.5 eV and signifies the onset of interband absorption. Electrical conductivities in the 10 -3

show abstract

Section: Electrical Conductivitysupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Optical properties of sputter deposited transparent and conducting TiO2:Nb films

2009

View full text Add to dashboard Cite

show abstract

“…Therefore coexistence of transparency and conductivity in such thin films is difficult to obtain. At present, TiO 2 is one of the most studied oxides for potential future application in transparent electronics [7][8][9][10]. Remarkable optical properties of pure TiO 2 include its high refractive index (about 2.5 [11]) and transparency above 90% for the visible light (from 385 nm).…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical properties of nanocrystalline TiO2:Pd semiconducting oxides

et al. 2011

View full text Add to dashboard Cite

Abstract:Electrical and optical properties of TiO 2 :Pd thin films deposited from Ti-Pd mosaic targets sputtered in reactive oxygen plasma have been studied. The properties were investigated for thin films with the Pd amount of 5.5 at. %, 8.4 at. % and 23 at. %. Based on resistivity measurements a drop from 10 3 down to almost 10 −3 Ωcm has been recorded when the Pd amount was varied from 5.5 at. % to 23 at. %, respectively. Moreover, it was shown that doping with different amounts of Pd results in the possibility of obtaining both types of electrical conduction: n-type for the TiO 2 with 5.5 at. % and 8.4 at. % of Pd and ptype for the TiO 2 with 23 at. % of Pd thin films. From optical measurements it has been found that as the Pd amount was increased the transmission through the thin films was reduced and position of the fundamental absorption edge was shifted toward a longer wavelength range of up to 600 nm. The optical band gap was calculated for direct and indirect transitions from optical absorption spectra. Structural properties were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD patterns displayed occurrence of the crystalline, TiO 2 -rutile for lower Pd amounts (5.5 at. %, 8.4 at. %), while the TiO 2 :Pd (23 at. %) thin films displayed XRD-amorphous behaviour. Images obtained from AFM displayed dense, nanocrystalline structure with homogenous distribution of crystallites. Additionally performed secondary ion mass spectroscopy investigation confirmed homogenous distribution of Pd in the whole thickness of the prepared thin films. PACS

show abstract

“…The intrinsic TiO2 films had a measured resistivity of ~10 -1 Ω cm at room temperature, consistent with previously reported results [156]. The resistivity measurements exhibited a temperature independent behavior for x ≤ 0.03.…”

Section: Thin Film Electrical Propertiessupporting

confidence: 90%

“…Activation energy can be computed from the resistivity and temperature graph using ~⁄ [156]. From the computations of the activation energy it can be seen that the activation energy does not drop completely t 0, signifying an activation in Hall mobility.…”

Section: Thin Film Electrical Propertiesmentioning

confidence: 99%

Mid-IR Range Photosensitive Device Based on Chemically Deposited Nanocrystalline Chalcogenide Thin Films with Tunable Opto-electrical properties

Slonopas

View full text Add to dashboard Cite

Past several decades have driven modernization of technology and machinery. This modernization has pushed the limits of our technology and increased our dependence on the energy. Additional side-effect of this rapid growth has been an exponential increase in the generated heat of the modern machinery.In most cases this waste heat is simply released into the environment. Numerous research groups have pursued an idea of capturing and converting the waste heat. Thermoelectric, pyroelectrics, organic Rankine cycle (ORC), and several other methods have been proposed to capture and convert the waste heat into electricity. Presently, all methods, however, have low conversion efficiency and are not economically feasible.In this work we focused on a practical approach to convert mid-IR electromagnetic waves to electricity. It is based on inexpensive thin film technology utilizing a junction between a narrow bandgap lead salt and wide bandgap chalcogenide film.Lead sulfide (PbS) was chosen as the narrow band semiconductors for the IR energy conversion.Lead salt photodetectors uniquely demonstrate high room temperature sensitivity to black-body sources in low temperatures and high internal quantum efficiency (QE). Further, the peculiar band structure of the lead salt allows for small Auger recombination and minimized losses.Due to its favorable opto-electrical properties and band compatibility with PbS, cadmium sulfide (CdS) was chosen as the wide bandgap semiconductor for this work.This work has shown that high quality nanocrystalline thin films of lead sulfide (PbS) and cadmium sulfide (CdS) can be grown cost efficiently using chemical bath deposition (CBD) method. Chemical bath seeding procedure was also developed in order to achieve reproducibility in the transport phenomena of the advanced materials. Seeding also allows these films to be deposited on any surface, including smooth flexible materials. Seeded kernels have shown to become the crystallization centers for both nanocrystalline films.Opto-electrical properties of the films were tuned in such a way to make the materials useful in a broad-band of the IR spectrum. We have shown that altering the parameters of the chemical bath deposition alters the grains hence changing the transport characteristics of the materials. We have shown that parameters of the chemical bath deposition can be optimized to produce highly sensitive thin films tuned to a specific range of the electromagnetic spectra.Novel transparent conducting oxide, Iridium (Ir) doped Titanium Oxide (TiO2) was developed in this work for the use in the optoelectronic device. Ir has been shown to be one of the most efficient dopants in thin films. Ir doped TiO2 has shown to have transport characteristics similar ii to those of the commonly used TCOs, with much higher optical transmittance in the infra-red range.Lastly devices were manufactured from the developed materials. TiO2/CdS/PbS/Au heterojunctions were manufactured and showed photoresponsivity. Device efficiencies were shown to depend on the...

show abstract

Fabrication of Low Resistivity Nb-doped TiO₂ Transparent Conductive Polycrystalline Films on Glass by Reactive Sputtering

Cited by 91 publications

References 12 publications

Optical properties of sputter deposited transparent and conducting TiO2:Nb films

Optical properties of sputter deposited transparent and conducting TiO2:Nb films

Optical and electrical properties of nanocrystalline TiO2:Pd semiconducting oxides

Mid-IR Range Photosensitive Device Based on Chemically Deposited Nanocrystalline Chalcogenide Thin Films with Tunable Opto-electrical properties

Contact Info

Product

Resources

About

Fabrication of Low Resistivity Nb-doped TiO2 Transparent Conductive Polycrystalline Films on Glass by Reactive Sputtering

Cited by 91 publications

References 12 publications

Optical properties of sputter deposited transparent and conducting TiO2:Nb films

Optical properties of sputter deposited transparent and conducting TiO2:Nb films

Optical and electrical properties of nanocrystalline TiO2:Pd semiconducting oxides

Mid-IR Range Photosensitive Device Based on Chemically Deposited Nanocrystalline Chalcogenide Thin Films with Tunable Opto-electrical properties

Contact Info

Product

Resources

About

Fabrication of Low Resistivity Nb-doped TiO₂ Transparent Conductive Polycrystalline Films on Glass by Reactive Sputtering