Fabrication of Metal Nanobridge Arrays using Sacrificial Silicon Nanowire

Abstract

-Novel fabrication method of nanobridge array of various materials was proposed using suspended silicon nanowire array as a sacrificial template structure. Nanobridges of various materials can be simply fabricated by direct deposition with thermal evaporation on the top of prefabricated suspended silicon nanobridge arrays, which are used as a sacrificial structure. Since silicon nanowire can be easily removed by selective dry etching, nanobridge arrays of an intended material are finally obtained. In this paper, metal nanobridges of Ti/Au, around 50-200 nm in thickness and width, 5-20 μm in length were fabricated to prove the advantages of the proposed nanowire or nanobridge fabrication method. The nanobridges of Ti/Au after complete removal of sacrificial silicon nanowire template were well-established and bending of nanobridge caused by the tensile stress was observed after silicon removing. Up to 50 nm and 10 μm of silicon nanowire in diameter and length respectively was also very useful for nanowire templates.

Stress-induced self-rolled metal/insulator bifilm microtube with micromesh walls

“…Micromesh patterns have etch holes; this feature facilitates the release of the grid structure and makes it freestanding by etching the underlying Si. Because of the underlying etching of the planar mesh with wet anisotropic Si etching in tetramethylammonium hydroxide solution, the SiO 2 grid becomes suspended except for the supporting posts (figure 2(c)) [22][23][24]. Figure 3(a) shows the It is well known that thin films can be made either tensile-stressed or compressed depending on the selected deposition conditions, and that the internal stress in such films can be accurately predefined in the film deposition process [26][27][28].…”

“…Note that the difference between the microtube and the micromesh grid is the freestanding self-rolled structure of the latter. Therefore, the microtube is better thermally isolated from the substrate than the microgrid, so the temperature of the metal/insulator microtube increases at a faster rate by Joule heating than that of the microgrid [24]. The electrical resistance of the metal/insulator microtube increases by Joule heating according to the temperature increase.…”