2007
DOI: 10.1016/j.mee.2007.01.158
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Fabrication of metal nanoring array by nanoimprint lithography (NIL) and reactive ion etching

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Cited by 42 publications
(23 citation statements)
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“…It can achieve the desired result because SiO 2 etching using CF 4 gas is highly anisotropic, leading to negligible etch of the SiO 2 surrounding the Cr “disk” on the substrate. Otherwise, a more isotropic etching chemistry using SF 6 gas would result in a ring-shaped pattern surrounding the Cr “disk” [10]. …”
Section: Discussionmentioning
confidence: 99%
“…It can achieve the desired result because SiO 2 etching using CF 4 gas is highly anisotropic, leading to negligible etch of the SiO 2 surrounding the Cr “disk” on the substrate. Otherwise, a more isotropic etching chemistry using SF 6 gas would result in a ring-shaped pattern surrounding the Cr “disk” [10]. …”
Section: Discussionmentioning
confidence: 99%
“…For example, circular concentric gratings have been demonstrated with different periods and line-widths. In previous study, nanoring arrays [10], circular metallic gratings with a minimum line-width of 80 nm were obtained [11]. Moreover, because the lift-off patterns are largely determined by the imprinted resist layer, the property of the resist layer would affect the final patterns.…”
Section: Nil Involving Lift-off Processmentioning
confidence: 99%
“…NIL has been used to fabricate metamaterials [56][57][58][59][60] and planar periodic arrays of nanoparticles, including arrays of nanospheres. 17,[54][55][61][62][63][64][65][66][67][68][69][70][71][72] This technique presents low cost, high throughput and high resolution, and it can be adopted for areas fabrication of about 1 cm 2 . 53…”
Section: Nanoimprint Lithographymentioning
confidence: 99%