Fabrication of Mg3Sb2 thin films via radio-frequency magnetron sputtering and analysis of the corresponding electrical properties

Epitaxial growth of high-quality Mg3Sb2 thin films on annealed c-plane Al2O3 substrates and their thermoelectric properties

“…19) Thin films of Mg 3 Sb 2 have also been extensively studied, 20,21) with a sputtered Mg 3 Sb 2 thin film exhibiting a power factor of about 0.11 μW cmK −2 . 22) It has also been reported that the power factor increases in thin films fabricated by MBE due to band convergence by strain control. 23,24) The report stated that a passive layer composed of not fully c-plane-oriented Mg 3 Sb 2 formed near the Al 2 O 3 substrate and a strained Mg 3 Sb 2 thin film grew on top of it.…”

“…3. Figures 3(a) and 3(b) show the Seebeck coefficient (S) and power factor (S 2 σ) as a function of electrical conductivity (σ), where other reported values of Mg 3 Sb 2 thin films fabricated by MBE 24) or sputtering [20][21][22] are also plotted. The values in this study, indicated by the red circles on the graph, show notably higher S at the same σ compared to other Mg 3 Sb 2 thin films.…”

“…This study provides valuable insight into enhancing the performance and development of other Zintl phase compounds grown on c-Al 2 O 3 , and Mg 3 Sb 2 -based highperformance thin-film thermoelectric materials. Other reported values of Mg 3 Sb 2 thin films fabricated by MBE 24) or sputtering [20][21][22] are shown by open marks. Black dashed lines in (a) and (b) are guides to the eye.…”

“…Thermoelectric properties of Mg 3 Sb 2 thin films at room temperature. σ dependences of (a) S and (b) S 2 σ, and the p dependences of (c) S and (d) μ.Other reported values of Mg 3 Sb 2 thin films fabricated by MBE24) or sputtering[20][21][22] are shown by open marks. Black dashed lines in (a) and (b) are guides to the eye.…”

Realizing High Electrical Conductivity in Chlorine-Doped Bi2S3 Thermoelectric Thin Films via Air Plasma Treatment

“…Consequently, enhancing the ZT m value of μTEGs requires reducing the electrical resistance, which will expand their application range and efficiency within the IoT field. Additionally, TEGs based on low or medium-temperature TE materials, such as CuCr 2 S 4 , CuFeS 2 , , Sn 0.93 Mn 0.1 Te, Mg 3 Sb 2 -based, − Bi 2 Te 3 -based, − PANI/nanorod composite material, etc., are of interests . However, most of these materials require rare and/or toxic elements, such as tellurium (Te) and chromium (Cr), limiting their wide application in civil facilities. − …”