2020
DOI: 10.1016/j.optlaseng.2020.106114
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Fabrication of millimeter-long structures in sapphire using femtosecond infrared laser pulses and selective etching

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Cited by 24 publications
(19 citation statements)
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“…When focused laser beam modifies crystalline sapphire modified region becomes amorphous [ 143 ]. Then, amorphous and porous regions are etched out in aggressive etchants like concentrated (40–50%) HF at room temperature [ 140 , 141 , 142 , 144 , 145 , 146 ] or around 35% KOH solution heated to 85–100 °C temperature [ 147 ]. Even more exotic etchant choices were demonstrated—sapphire was etched in phosphoric and sulfuric acid mixture at 300 °C temperature [ 148 , 149 ].…”
Section: Fabrication Of Functional 3d Structuresmentioning
confidence: 99%
“…When focused laser beam modifies crystalline sapphire modified region becomes amorphous [ 143 ]. Then, amorphous and porous regions are etched out in aggressive etchants like concentrated (40–50%) HF at room temperature [ 140 , 141 , 142 , 144 , 145 , 146 ] or around 35% KOH solution heated to 85–100 °C temperature [ 147 ]. Even more exotic etchant choices were demonstrated—sapphire was etched in phosphoric and sulfuric acid mixture at 300 °C temperature [ 148 , 149 ].…”
Section: Fabrication Of Functional 3d Structuresmentioning
confidence: 99%
“…It was shown that in fused silica, the light polarization determines the orientation of the nanaogratings, which affects the etching rate significantly [34]. A similar tendency of nanogratings orientation depending on light polarization has been demonstrated in crystalline sapphire samples, as well [35]. Thus, in single-line experiments, linear polarization perpendicular to the scanning direction was used to maintain a high etching rate.…”
Section: Methodsmentioning
confidence: 84%
“…When focused laser beam modifies crystalline sapphire modified region becomes amorphous [143]. Then, amorphous and porous regions are etched out in aggressive etchants like concentrated (40-50%) HF at room temperature [140][141][142][144][145][146] or around 35% KOH solution heated to 85-100 • C temperature [147]. Even more exotic etchant choices were demonstrated-sapphire was etched in phosphoric and sulfuric acid mixture at 300 • C temperature [148,149].…”
Section: Selective Laser Etching (Sle)mentioning
confidence: 99%